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Atomic Layer Deposition of Ru Thin Films Using a Ru(0) Metallorganic Precursor and O-2

Title
Atomic Layer Deposition of Ru Thin Films Using a Ru(0) Metallorganic Precursor and O-2
Authors
Hong, TE[Hong, Tae Eun]Choi, SH[Choi, Sang-Hyeok]Yeo, S[Yeo, Seungmin]Park, JY[Park, Ji-Yoon]Kim, SH[Kim, Soo-Hyun]Cheon, T[Cheon, Taehoon]Kim, H[Kim, Hoon]Kim, MK[Kim, Min-Kyu]Kim, H[Kim, Hyungjun]
DGIST Authors
Cheon, T[Cheon, Taehoon]
Issue Date
2013
Citation
ECS Journal of Solid State Science and Technology, 2(3), P47-P53
Type
Article
Article Type
Article
ISSN
2162-8769
Abstract
Ruthenium (Ru) thin filmswere grown on thermally-grown SiO2 substrate using atomic layer deposition (ALD) by a sequential supply of a zero-valent metallorganic precursor, (ethylbenzyl) (1-ethyl-1,4-cyclohexadienyl) Ru(0) (EBECHRu, C16H22Ru), and molecular oxygen (O 2) between 140 and 350°C while the typical temperature was 225°C. A self-limiting film growth was confirmed at the deposition temperature of 225°C and the growth rate was∼0.042 nm/cycle on the SiO2 substrate with a negligible number of incubation cycles (approximately 3 cycles). Plan-view transmission electron microscopy analysis showed that nucleation was started after only 3 ALD cycles and the maximum nuclei density of 1.67 × 1012/cm2 was obtained after 7 ALD cycles. A continuous Ru film with a thickness of ∼2.3 nm was formed after 60 ALD cycles. The film resistivity was decreased with increasing deposition temperature, which was closely related to its crystallinity and microstructure, and the minimum resistivity of ∼14 μ-cm was obtained at the deposition temperature of 350°C. The step coverage of the film deposited between 225 and 270°C was approximately 100% over the contact holes (bottom diameter: 0.065 μm) with a high aspect ratio (32:1). Finally, the ALD-Ru film was successfully evaluated in terms of its performance as a seed layer for Cu electroplating and as a bottom electrode for a metal-insulator-metal capacitor using an ALD-TiO2 single layer or an ALD HfO2/La 2O3/HfO2 multilayer as a dielectric. © 2012 The Electrochemical Society. All rights reserved.
URI
http://hdl.handle.net/20.500.11750/3296
DOI
10.1149/2.001303jss
Publisher
ELECTROCHEMICAL SOC INC
Files:
There are no files associated with this item.
Collection:
Center for Core Research Facilities1. Journal Articles


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