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Charge-carrier mediated ferromagnetism in Mo-doped In2O3 films
- Charge-carrier mediated ferromagnetism in Mo-doped In2O3 films
- Park, CY[Park, Chang-Yup]; You, CY[You, Chun-Yeol]; Jeon, KR[Jeon, Kun-Rok]; Shin, SC[Shin, Sung-Chul]
- DGIST Authors
- Shin, SC[Shin, Sung-Chul]
- Issue Date
- Applied Physics Letters, 100(22)
- Article Type
- Doping Concentration; Electric Conductivity; Electron Concentration; Ferromagnetism; Hall Effect Measurement; Indirect Exchange Interactions; Linear Relationships; Metallic Behaviors; Minimum Value; Mo Concentration; Saturation Magnetization; Semiconductor Doping; Temperature-Dependent Resistivity
- We investigated the correlation between the ferromagnetism and electric resistivity of Mo-doped (3-10 at.) In 2O 3 films. We find that the saturation magnetization increases with the Mo concentration until it reaches its maximum at 7 at. Mo doping (7.1 emu/cm 3), after which it rapidly decreases upon higher doping concentration. Interestingly, the resistivity reveals opposite behavior with the Mo concentration, showing a minimum value at 7 at. Mo doping. According to the temperature-dependent resistivity and the Hall effect measurements, we find that the samples with higher magnetization show metallic behavior with higher electron concentration. Notably, the samples show a linear relationship between the carrier concentration and the degree of magnetization. We believe the ferromagnetism in Mo-doped In 2O 3 is ascribed to the indirect exchange interaction mediated by the charge carriers. © 2012 American Institute of Physics.
- American Institute of Physics Publishing
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