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Charge-carrier mediated ferromagnetism in Mo-doped In2O3 films

Title
Charge-carrier mediated ferromagnetism in Mo-doped In2O3 films
Authors
Park, CY[Park, Chang-Yup]You, CY[You, Chun-Yeol]Jeon, KR[Jeon, Kun-Rok]Shin, SC[Shin, Sung-Chul]
DGIST Authors
Shin, SC[Shin, Sung-Chul]
Issue Date
2012-05-28
Citation
Applied Physics Letters, 100(22)
Type
Article
Article Type
Article
Keywords
Doping ConcentrationElectric ConductivityElectron ConcentrationFerromagnetismHall Effect MeasurementIndirect Exchange InteractionsLinear RelationshipsMetallic BehaviorsMinimum ValueMo ConcentrationSaturation MagnetizationSemiconductor DopingTemperature-Dependent Resistivity
ISSN
0003-6951
Abstract
We investigated the correlation between the ferromagnetism and electric resistivity of Mo-doped (3-10 at.) In 2O 3 films. We find that the saturation magnetization increases with the Mo concentration until it reaches its maximum at 7 at. Mo doping (7.1 emu/cm 3), after which it rapidly decreases upon higher doping concentration. Interestingly, the resistivity reveals opposite behavior with the Mo concentration, showing a minimum value at 7 at. Mo doping. According to the temperature-dependent resistivity and the Hall effect measurements, we find that the samples with higher magnetization show metallic behavior with higher electron concentration. Notably, the samples show a linear relationship between the carrier concentration and the degree of magnetization. We believe the ferromagnetism in Mo-doped In 2O 3 is ascribed to the indirect exchange interaction mediated by the charge carriers. © 2012 American Institute of Physics.
URI
http://hdl.handle.net/20.500.11750/3365
DOI
10.1063/1.4722928
Publisher
American Institute of Physics Publishing
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceETC1. Journal Articles


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