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Formation of p-Silicon Wire by Electrochemical Etching Using Positive Photoresist as an Etch Mask in Organic Electrolyte

Title
Formation of p-Silicon Wire by Electrochemical Etching Using Positive Photoresist as an Etch Mask in Organic Electrolyte
Authors
Jang, HS[Jang, Hwan Soo]Choi, HJ[Choi, Ho-Jin]Kang, SM[Kang, Sung Min]
DGIST Authors
Jang, HS[Jang, Hwan Soo]; Choi, HJ[Choi, Ho-Jin]
Issue Date
2011
Citation
Electrochemical and Solid State Letters, 14(8), D84-D88
Type
Article
Article Type
Article
Keywords
Alkaline EtchingAlkalinityAspect RatioDouble-StepElectrochemical EtchingEtch MaskEtch PitsEtching MasksHigh Aspect RatioMetal-Assisted Chemical EtchingNovel ProcessOrganic ElectrolyteP-Type SiliconPhotoresistsSilicon WiresWire
ISSN
1099-0062
Abstract
In our previous work, we reported on silicon wire formation through the pit formed by metal-assisted chemical etching method as an alternative of a periodical etch pit with an inverted pyramid shape created by alkaline etching. We propose a further new process to fabricate silicon wires with a high aspect ratio not using the two-type etch pit in p-type silicon. The proposed process used a typical positive photoresist as an etching mask and a consecutive double-step current density method. The novel process is further simple and cost-effective, and decreases the number of total processes for electrochemical etching process. © 2011 The Electrochemical Society. [DOI: 10.1149/1.3594111] All rights reserved.
URI
http://hdl.handle.net/20.500.11750/3482
DOI
10.1149/1.3594111
Publisher
Electrochemical Society
Files:
There are no files associated with this item.
Collection:
Center for Core Research Facilities1. Journal Articles
ETC1. Journal Articles


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