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Combinational Approach of Electrochemical Etching and Metal-Assisted Chemical Etching for p-Type Silicon Wire Formation

Title
Combinational Approach of Electrochemical Etching and Metal-Assisted Chemical Etching for p-Type Silicon Wire Formation
Authors
Jang, HS[Jang, Hwan Soo]Choi, HJ[Choi, Ho-Jin]Oh, BY[Oh, Byeong-Yun]Kim, JH[Kim, Jae Hyun]
DGIST Authors
Jang, HS[Jang, Hwan Soo]; Choi, HJ[Choi, Ho-Jin]; Kim, JH[Kim, Jae Hyun]
Issue Date
2011
Citation
Electrochemical and Solid State Letters, 14(1), D5-D9
Type
Article
Article Type
Article
Keywords
Aspect RatioCrystal OrientationElectrochemical EtchingEtch PitsHydrofluoric AcidKoh EtchingManufacturing CostMetal-Assisted Chemical EtchingNew ProcessP-Type SiliconPorous SiliconPotassium HydroxideSilicon SubstratesSilicon WiresWire
ISSN
1099-0062
Abstract
Ordered porous silicon and silicon wire arrays are conventionally fabricated by electrochemical etching in an electrolyte incorporating hydrofluoric acid through formation of a periodical etch pit with an inversed pyramid shape created by KOH etching depending on the crystal orientation of silicon. We propose a new process to form an etch pit using metal-assisted chemical etching, which is not dependent on the crystal orientation of the silicon substrate. The proposed process involves a simpler electrochemical etching process and lower manufacturing cost. Furthermore, it is exploited to produce p-type silicon wire arrays with aspect ratio of more than 5. © 2010 The Electrochemical Society.
URI
http://hdl.handle.net/20.500.11750/3483
DOI
10.1149/1.3504127
Publisher
Electrochemical and Solid-State
Related Researcher
Files:
There are no files associated with this item.
Collection:
Smart Textile Convergence Research Group1. Journal Articles
ETC1. Journal Articles
Division of Nano∙Energy Convergence Research1. Journal Articles


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