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Effect of various crucibles for high quality AlN crystal growth on SiC seed by PVT method

Title
Effect of various crucibles for high quality AlN crystal growth on SiC seed by PVT method
Authors
Lee, H.-J.Lee, H.-T.Shin, H.-W.Park, M.-S.Jang, Y.-S.Lee, W.-J.Kim, D.-Y.Hong, S.-K.Kim, J.-G.
DGIST Authors
Kim, J.-G.
Issue Date
2015
Citation
European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, 821-823, 1007-1010
Type
Conference
Article Type
Conference Paper
ISBN
9780000000000
ISSN
0255-5476
Abstract
Aluminum nitride (AlN) bulk crystals, approximately 50.8mm in diameter and up to 5mm thickness, were grown by a physical vapor transport (PVT) method in a tantalum crucible. To investigate the effect of crucible materials, various crucible materials, a graphite and TaC-coated graphite and tantalum crucible were used for the AlN growth. XRD pattern of AlN crystal grown on SiC seed in the Ta-crucible exhibited only (00l) peaks, indicating that AlN single crystal was successfully grown on SiC seed. The interface structure between AlN and SiC crystals was observed by a high resolution TEM. © (2015) Trans Tech Publications, Switzerland.
URI
http://hdl.handle.net/20.500.11750/3709
DOI
10.4028/www.scientific.net/MSF.821-823.1007
Publisher
Trans Tech Publications Ltd
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceNanoscale Optoelectronic Materials Laboratory2. Conference Papers


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