Department of Physics and Chemistry
Future Semiconductor Nanophotonics Laboratory
2. Conference Papers
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, H.-J. | - |
| dc.contributor.author | Lee, H.-T. | - |
| dc.contributor.author | Shin, H.-W. | - |
| dc.contributor.author | Park, M.-S. | - |
| dc.contributor.author | Jang, Y.-S. | - |
| dc.contributor.author | Lee, W.-J. | - |
| dc.contributor.author | Kim, D.-Y. | - |
| dc.contributor.author | Hong, S.-K. | - |
| dc.contributor.author | Kim, J.-G. | - |
| dc.date.available | 2017-07-11T07:40:02Z | - |
| dc.date.created | 2017-05-08 | - |
| dc.date.issued | 2015 | - |
| dc.identifier.isbn | 9780000000000 | - |
| dc.identifier.issn | 0255-5476 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/3709 | - |
| dc.description.abstract | Aluminum nitride (AlN) bulk crystals, approximately 50.8mm in diameter and up to 5mm thickness, were grown by a physical vapor transport (PVT) method in a tantalum crucible. To investigate the effect of crucible materials, various crucible materials, a graphite and TaC-coated graphite and tantalum crucible were used for the AlN growth. XRD pattern of AlN crystal grown on SiC seed in the Ta-crucible exhibited only (00l) peaks, indicating that AlN single crystal was successfully grown on SiC seed. The interface structure between AlN and SiC crystals was observed by a high resolution TEM. © (2015) Trans Tech Publications, Switzerland. | - |
| dc.publisher | Trans Tech Publications Ltd | - |
| dc.relation.ispartof | European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 | - |
| dc.title | Effect of various crucibles for high quality AlN crystal growth on SiC seed by PVT method | - |
| dc.type | Conference Paper | - |
| dc.identifier.doi | 10.4028/www.scientific.net/MSF.821-823.1007 | - |
| dc.identifier.scopusid | 2-s2.0-84950308419 | - |
| dc.identifier.bibliographicCitation | European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, v.821-823, pp.1007 - 1010 | - |
| dc.citation.conferenceDate | 2014-09-21 | - |
| dc.citation.conferencePlace | SZ | - |
| dc.citation.endPage | 1010 | - |
| dc.citation.startPage | 1007 | - |
| dc.citation.title | European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 | - |
| dc.citation.volume | 821-823 | - |
| dc.type.docType | Conference Paper | - |
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