Department of Physics and Chemistry
Future Semiconductor Nanophotonics Laboratory
2. Conference Papers
Effect of various crucibles for high quality AlN crystal growth on SiC seed by PVT method
- Title
- Effect of various crucibles for high quality AlN crystal growth on SiC seed by PVT method
- Author(s)
- Lee, H.-J. ; Lee, H.-T. ; Shin, H.-W. ; Park, M.-S. ; Jang, Y.-S. ; Lee, W.-J. ; Kim, D.-Y. ; Hong, S.-K. ; Kim, J.-G.
- Issued Date
- 2015
- Citation
- European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, v.821-823, pp.1007 - 1010
- Type
- Conference Paper
- ISBN
- 9780000000000
- ISSN
- 0255-5476
- Abstract
- Aluminum nitride (AlN) bulk crystals, approximately 50.8mm in diameter and up to 5mm thickness, were grown by a physical vapor transport (PVT) method in a tantalum crucible. To investigate the effect of crucible materials, various crucible materials, a graphite and TaC-coated graphite and tantalum crucible were used for the AlN growth. XRD pattern of AlN crystal grown on SiC seed in the Ta-crucible exhibited only (00l) peaks, indicating that AlN single crystal was successfully grown on SiC seed. The interface structure between AlN and SiC crystals was observed by a high resolution TEM. © (2015) Trans Tech Publications, Switzerland.
- Publisher
- Trans Tech Publications Ltd
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