Convergence Research Center for Solar Energy 3. Patents
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비휘발성 저항변화 메모리 소자

Title
비휘발성 저항변화 메모리 소자
Alternative Title
Non-volatile Resistance memory Device
Author(s)
김정혜 ; 손대호 ; 정은애 ; 김대환 ; 성시준 ; 강진규
DGIST Authors
손대호 ; 김대환 ; 성시준 ; 강진규
Country
KO
Application Date
2010-11-05
Application No.
10-2010-0109706
Registration Date
2011-09-26
Publication No.
10-1069124
Assignee
(재)대구경북과학기술원(100/100)
URI
http://hdl.handle.net/20.500.11750/8647 10-2010-0109706
Abstract
본 발명의 활성층은 In, Zn 및 Ta를 포함하며, 상기 In, 상기 Zn, 및 상기 Ta의 함유량의 합에 대한 상기 Ta 함유량의 비는 5 % 이상 30 % 이하이다.
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Division of Energy Technology 3. Patents
Convergence Research Center for Solar Energy 3. Patents

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