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Article
Enhancing resistive switching behavior in double perovskites through doping and silver vacancies: A first-principles analysis
  • Arooj, Aqsa ; 
  • Imran, Muhammad ; 
  • Ahmad, Sarfraz ; 
  • Gatasheh, Mansour K. ; 
  • Hussain, Fayyaz ; 
  • Ali, Syed Mansoor ; 
  • Arif Khalil, Rana Muhammad ; 
  • Ehsan, Muhammad Fahad
  • 2025-08
  • Arooj, Aqsa. (2025-08). Enhancing resistive switching behavior in double perovskites through doping and silver vacancies: A first-principles analysis. Journal of Physics and Chemistry of Solids, 203. doi: 10.1016/j.jpcs.2025.112714
  • Elsevier
  • View : 49
  • Download : 0
Article
New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition
  • Ansari, Mohd Zahid ; 
  • Janicek, Petr ; 
  • Namgung, Sook ; 
  • Kim, Hyangil ; 
  • Nandi, Dip K. ; 
  • Cheon, Taehoon ; 
  • Siddiqui, Masoom Raza ; 
  • Imran, Muhammad ; 
  • Jang, Yujin ; 
  • Bae, Jong-Seong ; 
    • et al
  • 2024-03
  • Ansari, Mohd Zahid. (2024-03). New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition. Surfaces and Interfaces, 46. doi: 10.1016/j.surfin.2024.104014
  • Elsevier
  • View : 287
  • Download : 0
Article
The impact of increasing Zr dopant concentration in Ruddlesden Popper perovskite to enhance Resistive Random-Access Memory performance: Using the DFT method
  • Hussain, Fayyaz ; 
  • Arooj, Aqsa ; 
  • Imran, Muhammad ; 
  • Tighezza, Ammar Mohamed ; 
  • Rasheed, Umbreen ; 
  • Khalil, R.M.Arif ; 
  • Ehsan, Muhammad Fahad
  • 2025-06
  • Hussain, Fayyaz. (2025-06). The impact of increasing Zr dopant concentration in Ruddlesden Popper perovskite to enhance Resistive Random-Access Memory performance: Using the DFT method. Journal of Molecular Graphics and Modelling, 137. doi: 10.1016/j.jmgm.2025.109000
  • Elsevier
  • View : 84
  • Download : 0
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