Quantized Conductance through Surface States in High Quality Three-Dimensional Dirac Semimetal Cd3As2 Nanowire/Nanoribbon p-n Junctions
An, Sungjin
;
Siu, Zhuo Bin
;
Kaladzhyan, Vardan
;
Bardarson, Jens H.
;
Lee, Sunghun
;
Lee, Myoung-Jae
;
Park, Kidong
;
Park, Jeunghee
;
Jalil, Mansoor B. A.
;
Seo, Jungpil
;
Jung, Minkyung
We report the observation of quantized conductance in high-mobility three-dimensional Dirac semimetal Cd3As2 nanowire and nanoribbon p-n junctions. By employing suspended device geometries with dual local gates, we form tunable p-n junctions and realize ballistic transport across sub-micron channel lengths. In a wide nanoribbon device with a channel width of similar to 330 nm, conductance plateaus appear at integer multiples of 2e(2)/h in the n-n regime under high magnetic fields. Numerical simu