Contemporary Challenges in van der Waals 2D Semiconductors
Kirubasankar, Balakrishnan
;
Mondal, Ashok
;
Yun, Seokjoon
;
Daw, Debottam
;
Xu, Yongshan
;
Nguyen, Lan Anh T.
;
Koo, Yeonjeong
;
Paul, Kamal Kumar
;
Hong, Heemyoung
;
Lee, Hyeongwoo
;
Luo, Yuting
;
Liu, Kailang
;
Higashitarumizu, Naoki
;
Erkensten, Daniel
;
Heo, Chang Yun
;
Jeon, Yu-rim
;
Lee, Taemin
;
Nam, Dae-hyun
;
Liu, Xinghui
;
Kim, Soomin
;
Duong, Dinh Loc
;
Wu, Qinke
;
Akinwande, Deji
;
Hersam, Mark Christopher
;
Javey, Ali
;
Malić, Ermin
;
Liu, Bilu
;
Zhai, Tianyou
;
Yang, Heejun
;
Park, Kyoung-duck
;
Kim, Ki-kang
;
Lee, Younghee
van der Waals (vdW) layered semiconductors have emerged as a unique class of quantum materials distinguished from their bulk counterparts by reduced dielectric screening, strong Coulomb interactions, large exciton binding energies, strong spin-orbit coupling, and pronounced thickness-dependent band structures. These fundamental attributes have enabled the exploration of exotic many-body physics and a broad spectrum of device applications, ranging from field-effect transistors and ferroelectric s