DGIST Library Repository

Browsing by Titles

All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 3 of 3

Article
New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition
  • Ansari, Mohd Zahid ; 
  • Janicek, Petr ; 
  • Namgung, Sook ; 
  • Kim, Hyangil ; 
  • Nandi, Dip K. ; 
  • Cheon, Taehoon ; 
  • Siddiqui, Masoom Raza ; 
  • Imran, Muhammad ; 
  • Jang, Yujin ; 
  • Bae, Jong-Seong ; 
    • et al
  • 2024-03
  • Ansari, Mohd Zahid. (2024-03). New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition. Surfaces and Interfaces, 46. doi: 10.1016/j.surfin.2024.104014
  • Elsevier
  • View : 287
  • Download : 0
Article
Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor
  • Ansari, Mohd Zahid ; 
  • Janicek, Petr ; 
  • Park, Ye Jin ; 
  • NamGung, Sook ; 
  • Cho, Bo Yeon ; 
  • Nandi, Dip K. ; 
  • Jang, Yujin ; 
  • Bae, Jong-Seong ; 
  • Hong, Tae Eun ; 
  • Cheon, Taehoon ; 
    • et al
  • 2023-05
  • Ansari, Mohd Zahid. (2023-05). Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor. Applied Surface Science, 620. doi: 10.1016/j.apsusc.2023.156834
  • Elsevier BV
  • View : 196
  • Download : 0
Article
The effects of nitrogen incorporation on the properties of atomic layer deposited Ru thin films as a direct-plateable diffusion barrier for Cu interconnect
  • Mun, Ki-Yeung ; 
  • Hong, Tae Eun ; 
  • Cheon, Taehoon ; 
  • Jang, Yujin ; 
  • Lim, Byoung-Yong ; 
  • Kim, Sunjung ; 
  • Kim, Soo-Hyun
  • 2014-07-01
  • Mun, Ki-Yeung. (2014-07-01). The effects of nitrogen incorporation on the properties of atomic layer deposited Ru thin films as a direct-plateable diffusion barrier for Cu interconnect. Thin Solid Films, 562, 118–125. doi: 10.1016/j.tsf.2014.03.088
  • Elsevier
  • View : 710
  • Download : 0
1