Browsing by Titles

Showing results 1 to 6 of 6

  • 2024-05
  • Baik, Seunghun. (2024-05). Heavily phosphorus doped germanium with local strain compensation effect by Co-implantation and rapid thermal process. Journal of Alloys and Compounds, 984. doi: 10.1016/j.jallcom.2024.173952
  • Elsevier
  • View : 220
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  • 2022-08
  • Jeong, Heejae. (2022-08). High and Uniform Phosphorus Doping in Germanium through a Modified Plasma Assisted Delta Doping Process with H2 Plasma Treatment. IEEE Electron Device Letters, 43(8), 1315–1318. doi: 10.1109/LED.2022.3182730
  • Institute of Electrical and Electronics Engineers
  • View : 597
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  • Park, Jongyoun
  • Jeong, Heejae
  • Park, Euyjin
  • Park, Geuntae
  • Ahn, Chunghyun
  • Lee, Sangsu
  • Kwon, Hyuk-Jun
  • Yu, Hyun-Yong
  • 2025-06-12
  • 2025 Symposium on VLSI Technology and Circuits, pp.1 - 3
  • Institute of Electrical and Electronics Engineers
  • View : 243
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  • Baek, Jongyeon
  • Kim, Seung-Hwan
  • Jeong, Heejae
  • Nguyen, Manh-Cuong
  • Baek, Daeyoon
  • Baik, Seunghun
  • Nguyen, An Hoang-Thuy
  • Baek, Jong-Hwa
  • Kim, Hyung-jun
  • Kwon, Hyuk-Jun
  • et al
  • 2023-01
  • Baek, Jongyeon. (2023-01). Low-temperature laser crystallization of Ge layers grown on MgO substrates. Applied Surface Science, 609. doi: 10.1016/j.apsusc.2022.155368
  • Elsevier B.V.
  • View : 402
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  • Kim, Dongsu
  • Jeong, Heejae
  • Pyo, Goeun
  • Heo, Su Jin
  • Baik, Seunghun
  • Kim, Seonhyoung
  • Choi, Hong Soo
  • Kwon, Hyuk-Jun
  • Jang, Jae Eun
  • 2024-07
  • Kim, Dongsu. (2024-07). Low-Temperature Nanosecond Laser Process of HZO-IGZO FeFETs toward Monolithic 3D System on Chip Integration. Advanced Science, 11(28). doi: 10.1002/advs.202401250
  • Wiley
  • View : 358
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Reducing Specific Contact Resistivity for n-type Germanium using Laser Activation Process and Nano-island Formation

  • 2023-11
  • Baik, Seunghun. (2023-11). Reducing Specific Contact Resistivity for n-type Germanium using Laser Activation Process and Nano-island Formation. Applied Surface Science, 638. doi: 10.1016/j.apsusc.2023.157967
  • Elsevier BV
  • View : 510
  • Download : 91
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