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Showing results 1 to 4 of 4

Article
Broadband and Flexible Photodiode of a Bromine-Doped Lateral MoTe2 Homojunction
  • Rabeel, Muhammad ; 
  • Kim, Honggyun ; 
  • Khan, Muhammad Asghar ; 
  • Abubakr, Muhammad ; 
  • Ahmad, Ibtisam ; 
  • Ahmad, Muneeb ; 
  • Rehman, Shania ; 
  • Lee, Myoung-Jae ; 
  • Khan, Muhammad Farooq ; 
  • Kim, Deok-Kee
  • 2023-11
  • Rabeel, Muhammad. (2023-11). Broadband and Flexible Photodiode of a Bromine-Doped Lateral MoTe2 Homojunction. ACS Photonics, 10(12), 4425–4436. doi: 10.1021/acsphotonics.3c01281
  • American Chemical Society
  • View : 189
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Article
Interface-driven performance boost in NbOx/V2O5 bilayer memristors for next-generation neuromorphic systems
  • Ahmad, Muneeb ; 
  • Kim, Honggyun ; 
  • Ahmad, Ibtisam ; 
  • Ghazanfar, Hammad ; 
  • Ghafoor, Faisal ; 
  • Aziz, Jamal ; 
  • Rabeel, Muhammad ; 
  • Khan, Muhammad Farooq ; 
  • Lee, Myoung-Jae ; 
  • Dastgeer, Ghulam ; 
    • et al
  • 2025-12
  • Materials Today Nano, v.32
  • Elsevier
  • View : 32
  • Download : 0
Article
Novel Solution-Processed Fe2O3/WS2 Hybrid Nanocomposite Dynamic Memristor for Advanced Power Efficiency in Neuromorphic Computing
  • Ghafoor, Faisal ; 
  • Kim, Honggyun ; 
  • Ghafoor, Bilal ; 
  • Ahmed, Zaheer ; 
  • Khan, Muhammad Farooq ; 
  • Rabeel, Muhammad ; 
  • Maqsood, Muhammad Faheem ; 
  • Nasir, Sobia ; 
  • Zulfiqar, Wajid ; 
  • Dastageer, Ghulam ; 
    • et al
  • 2025-05
  • Ghafoor, Faisal. (2025-05). Novel Solution-Processed Fe2O3/WS2 Hybrid Nanocomposite Dynamic Memristor for Advanced Power Efficiency in Neuromorphic Computing. Advanced Science, 12(17). doi: 10.1002/advs.202408133
  • Wiley
  • View : 374
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Article
Power efficient transistors with low subthreshold swing using abrupt switching devices
  • Aziz, Jamal ; 
  • Kim, Honggyun ; 
  • Hussain, Tassawar ; 
  • Lee, Hojin ; 
  • Choi, Taekjib ; 
  • Rehman, Shania ; 
  • Khan, Muhammad Farooq ; 
  • Kadam, Kalyani D. ; 
  • Patil, Harshada ; 
  • Mehdi, Syed Muhammad Zain ; 
    • et al
  • 2022-05
  • Aziz, Jamal. (2022-05). Power efficient transistors with low subthreshold swing using abrupt switching devices. Nano Energy, 95. doi: 10.1016/j.nanoen.2022.107060
  • Elsevier BV
  • View : 309
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