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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

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Article
Nonvolatile flash memory device with ferroelectric blocking layer via in situ ALD process
  • 2023-07
  • Kim, Dongsu. (2023-07). Nonvolatile flash memory device with ferroelectric blocking layer via in situ ALD process. Applied Physics Letters, 123(4). doi: 10.1063/5.0123608
  • American Institute of Physics
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