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Conference
Atomic Layer Deposited Highly Conductive Niobium Carbide Thin Films as Next-Generation Diffusion Barriers for Cu and Ru Interconnects
  • Park, Chaehyun ; 
  • Kweon, Minjeong ; 
  • Mohapatra, Debananda ; 
  • Cheon, Taehoon ; 
  • Bae, Jong-Seong ; 
  • Jeong, Daeyoon ; 
  • Park, Young-Bae ; 
  • Kim, Soo-Hyun
  • 2025-06-03
  • International Interconnect Technology Conference, IITC 2025, pp.1 - 3
  • Korean Institute of Electrical and Electronic Material Engineers(한국전기전자재료학회)
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Article
Highly Conductive Ultrathin Niobium Carbide Thin Films as Next-Generation Diffusion Barriers for Cu and Ru Interconnects Prepared by Plasma-Enhanced Atomic Layer Deposition
  • Park, Chaehyun ; 
  • Kweon, Minjeong ; 
  • Mohapatra, Debananda ; 
  • Cheon, Taehoon ; 
  • Bae, Jong-Seong ; 
  • Jeong, Daeyoon ; 
  • Jang, Hyunwoo ; 
  • Shim, Seungwon ; 
  • Park, Young-Bae ; 
  • Kang, Youngho ; 
    • et al
  • 2025-06
  • Park, Chaehyun. (2025-06). Highly Conductive Ultrathin Niobium Carbide Thin Films as Next-Generation Diffusion Barriers for Cu and Ru Interconnects Prepared by Plasma-Enhanced Atomic Layer Deposition. Chemistry of Materials, 37(13), 4743–4757. doi: 10.1021/acs.chemmater.5c00557
  • American Chemical Society
  • View : 1094
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