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Showing results 1 to 8 of 8

Article
A Unified Understanding of the Thickness-Dependent Bandgap Transition in Hexagonal Two-Dimensional Semiconductors
  • 2016-02-18
  • Kang, Joongoo. (2016-02-18). A Unified Understanding of the Thickness-Dependent Bandgap Transition in Hexagonal Two-Dimensional Semiconductors. Journal of Physical Chemistry Letters, 7(4), 597–602. doi: 10.1021/acs.jpclett.5b02687
  • American Chemical Society
  • View : 1121
  • Download : 0
Article
Creating intermediate bands in ZnTe via co-alloying approach
  • Kim, Junho ; 
  • Yin, Wan-Jian ; 
  • Kang, Joongoo ; 
  • Yan, Yanfa ; 
  • Wei, Su-Huai ; 
  • Al-Jassim, Mowafak M.
  • 2014-12
  • Kim, Junho. (2014-12). Creating intermediate bands in ZnTe via co-alloying approach. Applied Physics Express, 7(12), 121201. doi: 10.7567/APEX.7.121201
  • Institute of Physics Publishing
  • View : 848
  • Download : 0
Article
First-principles multiple-barrier diffusion theory: The case study of interstitial diffusion in CdTe
  • Yang, Ji-Hui ; 
  • Park, Ji-Sang ; 
  • Kang, Joongoo ; 
  • Wei, Su-Huai
  • 2015-02
  • Yang, Ji-Hui. (2015-02). First-principles multiple-barrier diffusion theory: The case study of interstitial diffusion in CdTe. Physical Review B, 91(7). doi: 10.1103/PhysRevB.91.075202
  • American Chemical Society
  • View : 859
  • Download : 0
Article
Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases
  • Kang, Joongoo ; 
  • Park, Ji-Sang ; 
  • Stradins, Pauls ; 
  • Wei, Su-Huai
  • 2017-07-13
  • Kang, Joongoo. (2017-07-13). Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases. Physical Review B, 96(4). doi: 10.1103/PhysRevB.96.045203
  • American Physical Society
  • View : 1074
  • Download : 0

Period-doubling reconstructions of semiconductor partial dislocations

Article
Period-doubling reconstructions of semiconductor partial dislocations
  • Park, Ji-Sang ; 
  • Huang, Bing ; 
  • Wei, Su-Huai ; 
  • Kang, Joongoo ; 
  • McMahon, William E.
  • 2015-09
  • Park, Ji-Sang. (2015-09). Period-doubling reconstructions of semiconductor partial dislocations. NPG Asia Materials, 7(9). doi: 10.1038/am.2015.102
  • Nature Publishing Group
  • View : 1144
  • Download : 116
Article
Polymerization of defect states at dislocation cores in InAs
  • Park, Ji-Sang ; 
  • Kang, Joongoo ; 
  • Yang, Ji-Hui ; 
  • McMahon, W. E. ; 
  • Wei, Su-Huai
  • 2016-01-28
  • Park, Ji-Sang. (2016-01-28). Polymerization of defect states at dislocation cores in InAs. Journal of Applied Physics, 119(4). doi: 10.1063/1.4940743
  • American Institute of Physics Publishing
  • View : 1149
  • Download : 0
Article
Stability and electronic structure of the low-Sigma grain boundaries in CdTe: a density functional study
  • Park, Ji-Sang ; 
  • Kang, Joongoo ; 
  • Yang, Ji-Hui ; 
  • Metzger, Wyatt ; 
  • Wei, Su-Huai
  • 2015-01-15
  • Park, Ji-Sang. (2015-01-15). Stability and electronic structure of the low-Sigma grain boundaries in CdTe: a density functional study. New Journal of Physics, 17. doi: 10.1088/1367-2630/17/1/013027
  • Institute of Physics Publishing
  • View : 802
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Article
Tuning the Fermi level beyond the equilibrium doping limit through quenching: The case of CdTe
  • Yang, Ji-Hui ; 
  • Park, Ji-Sang ; 
  • Kang, Joongoo ; 
  • Metzger, Wyatt ; 
  • Barnes, Teresa ; 
  • Wei, Su-Huai
  • 2014-12
  • Yang, Ji-Hui. (2014-12). Tuning the Fermi level beyond the equilibrium doping limit through quenching: The case of CdTe. Physical Review B, 90(24). doi: 10.1103/PhysRevB.90.245202
  • American Physical Society
  • View : 832
  • Download : 0
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