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Article
Unveiling charge trapping dynamics in SiO2/HfZrOX-based ferroelectric field-effect-transistors to minimize read-after-write latency
  • Kim, Haesung ; 
  • Yang, Hyojin ; 
  • Choi, Yubin ; 
  • Kim, Hwanjin ; 
  • Lee, Yoon Jung ; 
  • Choi, Sung-Jin ; 
  • Kim, Dae Hwan ; 
  • Kim, Dong Myong ; 
  • Kwon, Daewoong ; 
  • Bae, Jong-Ho
  • 2026-09
  • CURRENT APPLIED PHYSICS, v.89, pp.181 - 185
  • ELSEVIER
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