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전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 6 of 6

Article
Heavily phosphorus doped germanium with local strain compensation effect by Co-implantation and rapid thermal process
  • 2024-05
  • Baik, Seunghun. (2024-05). Heavily phosphorus doped germanium with local strain compensation effect by Co-implantation and rapid thermal process. Journal of Alloys and Compounds, 984. doi: 10.1016/j.jallcom.2024.173952
  • Elsevier
  • View : 220
  • Download : 0
Article
High and Uniform Phosphorus Doping in Germanium through a Modified Plasma Assisted Delta Doping Process with H2 Plasma Treatment
  • 2022-08
  • Jeong, Heejae. (2022-08). High and Uniform Phosphorus Doping in Germanium through a Modified Plasma Assisted Delta Doping Process with H2 Plasma Treatment. IEEE Electron Device Letters, 43(8), 1315–1318. doi: 10.1109/LED.2022.3182730
  • Institute of Electrical and Electronics Engineers
  • View : 597
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Article
Integrated study of first principles calculations and experimental measurements for Li-ionic conductivity in Al-doped solid-state LiGe2(PO4)(3) electrolyte
  • Kang, Joonhee ; 
  • Chung, Habin ; 
  • Doh, Chilhoon ; 
  • Kang, Byoungwoo ; 
  • Han, Byungchan
  • 2015-10-20
  • Kang, Joonhee. (2015-10-20). Integrated study of first principles calculations and experimental measurements for Li-ionic conductivity in Al-doped solid-state LiGe2(PO4)(3) electrolyte. Journal of Power Sources, 293, 11–16. doi: 10.1016/j.jpowsour.2015.05.060
  • Elsevier B.V.
  • View : 1245
  • Download : 0

Physical routes for the synthesis of kesterite

Article
Physical routes for the synthesis of kesterite
  • Ratz, T ; 
  • Brammertz, G ; 
  • Caballero, R ; 
  • León, M ; 
  • Canulescu, S ; 
  • Schou, J ; 
  • Gütay, L ; 
  • Pareek, D ; 
  • Taskesen, T ; 
  • Kim, Dae-Hwan ; 
    • et al
  • 2019-10
  • Ratz, T. (2019-10). Physical routes for the synthesis of kesterite. JPhys Energy, 1(4), 042003. doi: 10.1088/2515-7655/ab281c
  • IOP Publishing
  • View : 479
  • Download : 180
Article
Realization of a 2H–Si microneedle with an ultrafast growth rate of 6.7 × 104 Å·s−1
  • Mun, Suhyun ; 
  • Kim, Kyoung Hwa ; 
  • Park, Seonwoo ; 
  • Jeon, Injun ; 
  • Jeon, Hunsoo ; 
  • Lee, Jae Hak ; 
  • Yang, Min ; 
  • Shin, Myeong-Cheol ; 
  • Oh, Jong-Min ; 
  • Shin, Weon Ho ; 
    • et al
  • 2025-03
  • Mun, Suhyun. (2025-03). Realization of a 2H–Si microneedle with an ultrafast growth rate of 6.7 × 104 Å·s−1. Semiconductor Science and Technology, 40(3). doi: 10.1088/1361-6641/ada9c9
  • Institute of Physics Publishing
  • View : 700
  • Download : 0

Reducing Specific Contact Resistivity for n-type Germanium using Laser Activation Process and Nano-island Formation

Article
Reducing Specific Contact Resistivity for n-type Germanium using Laser Activation Process and Nano-island Formation
  • 2023-11
  • Baik, Seunghun. (2023-11). Reducing Specific Contact Resistivity for n-type Germanium using Laser Activation Process and Nano-island Formation. Applied Surface Science, 638. doi: 10.1016/j.apsusc.2023.157967
  • Elsevier BV
  • View : 510
  • Download : 91
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