DGIST Library Repository

Browsing by Titles

All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 4 of 4

Article
Combustion-assisted low-temperature solution process for high-performance SnO2 thin-film transistors
  • 2022-07
  • Jang, Bongho. (2022-07). Combustion-assisted low-temperature solution process for high-performance SnO2 thin-film transistors. Ceramics International, 48(14), 20591–20598. doi: 10.1016/j.ceramint.2022.04.026
  • Pergamon Press Ltd.
  • View : 636
  • Download : 0
Article
Schottky barrier modulation of bottom contact SnO2 thin-film transistors via chloride-based combustion synthesis
  • Jang, Bongho ; 
  • Lee, Junhee ; 
  • Kang, Hongki ; 
  • Jang, Jaewon ; 
  • Kwon, Hyuk-Jun
  • 2023-06
  • Jang, Bongho. (2023-06). Schottky barrier modulation of bottom contact SnO2 thin-film transistors via chloride-based combustion synthesis. Journal of Materials Science & Technology, 148, 199–208. doi: 10.1016/j.jmst.2022.11.025
  • Allerton Press Inc.
  • View : 404
  • Download : 0
Article
Sol-gel processed Y2O3 embedded capacitor based physically unclonable function
  • Lee, Donghoon ; 
  • Lee, Jungha ; 
  • Shin, Minhye ; 
  • Kim, Duhee ; 
  • Lee, Junhee ; 
  • Bissannagari, Murali ; 
  • Hong, Woongki ; 
  • Jang, Jae Eun ; 
  • Jang, Jaewon ; 
  • Kang, Hongki
  • 2023-12
  • Lee, Donghoon. (2023-12). Sol-gel processed Y2O3 embedded capacitor based physically unclonable function. Materials Science in Semiconductor Processing, 168. doi: 10.1016/j.mssp.2023.107860
  • Elsevier
  • View : 301
  • Download : 0
Article
Storage-period dependent bias-stress instability of solution-processed amorphous indium-zinc-oxide thin-film transistors
  • 2015-09
  • Kim, Jung-Hye. (2015-09). Storage-period dependent bias-stress instability of solution-processed amorphous indium-zinc-oxide thin-film transistors. Current Applied Physics, 15(S2), S64–S68. doi: 10.1016/j.cap.2015.04.019
  • Elsevier
  • View : 670
  • Download : 0
1