Showing results 1 to 2 of 2
- 2018-01
- Ra, Hyun Soo. (2018-01). Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers. ACS Applied Materials & Interfaces, 10(1), 925–932. doi: 10.1021/acsami.7b16809
- American Chemical Society
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Bisht, Prashant
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Shim, Junoh
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Oh, Jooon
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Lee, Jieun
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Shin, Hoseong
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Jeong, Hyeonho
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Kim, Jimin
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Lee, Junho
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Kwon, Hyuk-Jun
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Kim, Sunkook
- 2025-10
- Bisht, Prashant. (2025-10). Next generation High-Mobility 2D chalcogenides TFT for display backplane. International Journal of Extreme Manufacturing, 7(5). doi: 10.1088/2631-7990/add4d1
- IOP Publishing
- View : 304
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