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Article
Study of High Performance Nanoscale Channel Length Vertical Transistors with a Self-Aligned Blocking Layer
  • 2025-01
  • Pyo, Goeun. (2025-01). Study of High Performance Nanoscale Channel Length Vertical Transistors with a Self-Aligned Blocking Layer. ACS Applied Materials & Interfaces, 17(5), 8474–8484. doi: 10.1021/acsami.4c16429
  • American Chemical Society
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