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Thermally driven homonuclear-stacking phase of MoS2 through desulfurization

Title
Thermally driven homonuclear-stacking phase of MoS2 through desulfurization
Authors
Hwang, Young HunYun, Won SeokCha, Gi-BeomHong, Soon CheolHan, Sang Wook
DGIST Authors
Hwang, Young Hun; Yun, Won Seok; Cha, Gi-Beom; Hong, Soon Cheol; Han, Sang Wook
Issue Date
2019-06
Citation
Nanoscale, 11(23), 11138-11144
Type
Article
Article Type
Article
Keywords
DesulfurizationEnergy gapFunctional materialsLayered semiconductorsEngineering phaseHomonuclearS-layersSingle-crystallineStacking phaseSub-layersThermally drivenTop layersMolybdenum compounds
ISSN
2040-3364
Abstract
Engineering phase transitions or finding new polymorphs offers tremendous opportunities for developing functional materials. We reveal that the thermally driven desulfurization of single-crystalline MoS2 samples improves transport properties by reducing the band gap and further induces metallization. Semi-desulfurization, i.e., removal of the topmost S layer, results in the placement of the exposed Mo layers directly on top of the following sub-layers, together with the bottom S layer of the top layer. This homonuclear (AA) stacking derived from the AA′ stacking of the hexagonal (2H) phase is retained even after further desulfurization of the remaining bottom S layer, i.e., full desulfurization of the top layer. Our findings fundamentally explain why the 2H phase of TMDs is characterized by AA′ stacking. © 2019 The Royal Society of Chemistry.
URI
http://hdl.handle.net/20.500.11750/10094
DOI
10.1039/c9nr01369e
Publisher
Royal Society of Chemistry
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