Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Youngjae | - |
dc.contributor.author | Lee, JaeDong | - |
dc.date.accessioned | 2019-07-04T07:25:02Z | - |
dc.date.available | 2019-07-04T07:25:02Z | - |
dc.date.created | 2019-07-01 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/10096 | - |
dc.description.abstract | An interplay between an applied strain and the Berry curvature reconstruction in the uniaxially strained monolayer MoS2 is explored that leads to the unbalanced Berry curvatures centered at K and -K points and, eventually, the valley magnetization under an external electric field. This is shown to explain a recent experimental observation of the valley magnetoelectric effect and develop a novel concept of the valley magnetic domain (VMD), i.e., a real-space homogeneous distribution of the valley magnetization. A realization of VMD guarantees a sufficient number of stable valley-polarized carriers, one of the most essential prerequisites of the valleytronics. Furthermore, we discover the anomalous electron dynamics through the VMD activation and achieve a manipulation of the anomalous transverse current perpendicular to the electric field, directly accessible to the signal processing [for instance, the current modulation under the VMD (i.e., the VMD wall) moving and the terahertz current rectification under the VMD switching]. This suggests a concept of VMD for use in providing new physical insight into the valleytronic functionality and its manipulation as a key ingredient of potential device applications. © 2019 American Chemical Society. | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.title | Anomalous Electron Dynamics Induced through the Valley Magnetic Domain: A Pathway to Valleytronic Current Processing | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acs.nanolett.9b01676 | - |
dc.identifier.scopusid | 2-s2.0-85066975228 | - |
dc.identifier.bibliographicCitation | Nano Letters, v.19, no.6, pp.4166 - 4173 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | anomalous transverse current | - |
dc.subject.keywordAuthor | symmetry-broken transverse diode | - |
dc.subject.keywordAuthor | valley Hall effect | - |
dc.subject.keywordAuthor | valley magnetic domain | - |
dc.subject.keywordAuthor | Valley magnetoelectric effect | - |
dc.subject.keywordPlus | Magnetization | - |
dc.subject.keywordPlus | Magnetoelectric effects | - |
dc.subject.keywordPlus | Modulation | - |
dc.subject.keywordPlus | Molybdenum compounds | - |
dc.subject.keywordPlus | Sulfur compounds | - |
dc.subject.keywordPlus | Dynamics | - |
dc.subject.keywordPlus | Electric fields | - |
dc.subject.keywordPlus | Fruits | - |
dc.subject.keywordPlus | Landforms | - |
dc.subject.keywordPlus | Layered semiconductors | - |
dc.subject.keywordPlus | Magnetic domains | - |
dc.subject.keywordPlus | Current modulation | - |
dc.subject.keywordPlus | Current processing | - |
dc.subject.keywordPlus | Current rectifications | - |
dc.subject.keywordPlus | Electron dynamics | - |
dc.subject.keywordPlus | External electric field | - |
dc.subject.keywordPlus | Homogeneous distribution | - |
dc.subject.keywordPlus | Potential device applications | - |
dc.subject.keywordPlus | Transverse currents | - |
dc.subject.keywordPlus | Electric rectifiers | - |
dc.citation.endPage | 4173 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 4166 | - |
dc.citation.title | Nano Letters | - |
dc.citation.volume | 19 | - |
There are no files associated with this item.