Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Neethipathi, Deepan Kumar | ko |
dc.contributor.author | Ryu, Hwa Sook | ko |
dc.contributor.author | Jang, Min Su | ko |
dc.contributor.author | Yoon, Seongwon | ko |
dc.contributor.author | Sim, Kyu Min | ko |
dc.contributor.author | Woo, Han Young | ko |
dc.contributor.author | Chung, Dae Sung | ko |
dc.date.accessioned | 2019-07-04T07:25:05Z | - |
dc.date.available | 2019-07-04T07:25:05Z | - |
dc.date.created | 2019-06-13 | - |
dc.date.issued | 2019-06 | - |
dc.identifier.citation | ACS Applied Materials and Interfaces, v.11, no.23, pp.21211 - 21217 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/10097 | - |
dc.description.abstract | Here, a smart strategy for decreasing the active layer thickness of the organic photodiode down to 70 nm is demonstrated by utilizing a trap-assisted photomultiplication mechanism with the optimized chemical composition. Despite the presence of a high dark current, dramatically enhanced external quantum efficiency (EQE) via photomultiplication can allow significantly reduced active layer thickness, yielding high detectivity comparable to that of conventional Si. To achieve this, a spatially confined and electrically isolated optical sensitizer, 2,2′-((2Z,2′Z)-((4,4,9,9-tetrahexyl-4,9-dihydro-s-indaceno[1,2-b:5,6-b′]dithiophene-2,7-diyl)bis(methanylylidene))bis(3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile (IDIC) was introduced strategically between a hole transport active layer and a cathode. A nonfullerene acceptor, IDIC, turned out to be a much more efficient sensitizer than the conventional fullerene-based acceptors, as confirmed by the effective lowering of the Schottky barrier under illumination, as well as the highest EQE exceeding 130 000%. Due to its favorable electronic structure as well as two-dimensional molecular structure, a high detectivity over 1012 Jones was successfully demonstrated while maintaining the active layer thickness as 70 nm. © 2019 American Chemical Society. | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.title | High-Performance Photomultiplication Photodiode with a 70 nm-Thick Active Layer Assisted by IDIC as an Efficient Molecular Sensitizer | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsami.9b01090 | - |
dc.identifier.wosid | 000471835800069 | - |
dc.identifier.scopusid | 2-s2.0-85066477344 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.contributor.nonIdAuthor | Ryu, Hwa Sook | - |
dc.contributor.nonIdAuthor | Woo, Han Young | - |
dc.identifier.citationVolume | 11 | - |
dc.identifier.citationNumber | 23 | - |
dc.identifier.citationStartPage | 21211 | - |
dc.identifier.citationEndPage | 21217 | - |
dc.identifier.citationTitle | ACS Applied Materials and Interfaces | - |
dc.type.journalArticle | Article | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | external quantum efficiency | - |
dc.subject.keywordAuthor | nonfullerene acceptor | - |
dc.subject.keywordAuthor | photomultiplication | - |
dc.subject.keywordAuthor | polymer photodetector | - |
dc.subject.keywordAuthor | detectivity | - |
dc.subject.keywordPlus | Efficiency | - |
dc.subject.keywordPlus | Electronic structure | - |
dc.subject.keywordPlus | Fullerenes | - |
dc.subject.keywordPlus | Photodetectors | - |
dc.subject.keywordPlus | Photodiodes | - |
dc.subject.keywordPlus | Schottky barrier diodes | - |
dc.subject.keywordPlus | Detectivity | - |
dc.subject.keywordPlus | External quantum efficiency | - |
dc.subject.keywordPlus | nonfullerene acceptor | - |
dc.subject.keywordPlus | Photomultiplication | - |
dc.subject.keywordPlus | Polymer photodetectors | - |
dc.subject.keywordPlus | Quantum efficiency | - |
dc.contributor.affiliatedAuthor | Chung, Dae Sung | - |
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