Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Jaewook | ko |
dc.contributor.author | Kim, Joonwoo | ko |
dc.date.accessioned | 2019-07-11T05:54:48Z | - |
dc.date.available | 2019-07-11T05:54:48Z | - |
dc.date.created | 2019-07-11 | - |
dc.date.issued | 2019-07 | - |
dc.identifier.citation | Japanese Journal of Applied Physics, v.58, no.7, pp.071003 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/10118 | - |
dc.description.abstract | In this paper, the electrical characteristics of a-IGZO TFTs with graphene source/drain (S/D) electrodes subjected to argon plasma treatment are analyzed. Depending on the channel length (L), the a-IGZO TFTs showed parasitic resistance dominant (L < 30 μm) and channel conduction dominant regions (L ≥ 30 μm). Using the transmission line method, the intrinsic parameters were extracted. The intrinsic field-effect mobility was about 9.79 cm2 V-1 s-1 and the width-normalized parasitic resistance value was about 460 Ωcm, which are comparable with those of a-IGZO TFTs having S/D plasma-treated regions with no contact metal. Temperature-dependent measurement indicates that the graphene electrodes affected the thermally deactivated behavior of the a-IGZO TFTs, which is different from the case of a-IGZO TFTs having conventional metal electrodes. © 2019 The Japan Society of Applied Physics. | - |
dc.language | English | - |
dc.publisher | Institute of Physics Publishing | - |
dc.title | Electrical characterization of graphene source/drain electrodes in amorphous indium-gallium-zinc-oxide thin-film transistors subjected to plasma treatment in contact regions | - |
dc.type | Article | - |
dc.identifier.doi | 10.7567/1347-4065/ab24fe | - |
dc.identifier.wosid | 000472754400001 | - |
dc.identifier.scopusid | 2-s2.0-85070735833 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.contributor.nonIdAuthor | Jeong, Jaewook | - |
dc.identifier.citationVolume | 58 | - |
dc.identifier.citationNumber | 7 | - |
dc.identifier.citationStartPage | 071003 | - |
dc.identifier.citationTitle | Japanese Journal of Applied Physics | - |
dc.type.journalArticle | Article | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Kim, Joonwoo | - |
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