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High Performance Optoelectronic Devices Based on Semiconductor Nano-Heterostructures

Title
High Performance Optoelectronic Devices Based on Semiconductor Nano-Heterostructures
Authors
Do-Hyun Kwak
DGIST Authors
Kwak, Do-Hyun; Lee, JaeDongLee, Jong-Soo
Advisor(s)
이종수
Co-Advisor(s)
JaeDong Lee
Issue Date
2019
Available Date
2019-08-23
Degree Date
2019-08
Type
Thesis
Description
2D material, quantum dot, 0D/2D heterostructure, 2D/2D heterostructure, optoelectronic device
Table Of Contents
1. Introduction 1 2. Theoretical background 4 2.1 Optoelectronic applications 4 2.1.1 Field effect transistors (FET) 4 2.1.2 Field effect phototransistors 5 2.1.3 Photovoltaics 8 2.1.4 Photocurrent geneartion mechanisMaster 10 2.2 Two dimensional (2D) materials for optoelectronics 14 2.2.1 Van der Waals family: 2D materials 14 2.2.2 Optoelectronic properties of 2D materials 16 2.2.3 Heterostructures based on van der Waals familiy 18 2.3 Quantum dot (0D) materials 21 2.3.1 Introduction of quantum dots 21 2.3.2 Metalic and semiconducting quautm dots 23 2.3.3 0D-2D mixed hybrid devices 24 2.4 Nanodevice fabrication 27 2.4.1 Dvice fabrication based on 2D materials 27 2.4.2 Fabrication of 2D-2D heterostructure by a wet transfer method 29 2.4.3 Fabrication of 0D-2D heterostructure 31 2.5 References 32 3. High performance hybrid graphene-CsPbBr3-xIx perovskite nanocrystals photodetector 38 3.1 Introduction 38 3.2 Results and discussion 39 3.3 Conclusion 46 3.4 References 47 4. High performance 0D-2D mixed dimensional InP QD/Black phosphorus photodetector 49 4.1 Introduction 49 4.2 Results and discussion 51 4.3 Conclusion 65 4.4 Experimental Section 65 4.5 References 69 5. Recovery mechanism of degraded black phosphorus field-effect transistors by 1, 2-ethanedithiol chemistry and extended device stability 72 5.1 Introduction 72 5.2 Results and discussion 73 5.3 Conclusion 84 5.4 Experimental section 84 5.5 References 86 6. High performance photovoltaic effect with electrically balanced charge carriers in black phosphorus and WS2 heterojunction 89 6.1 Introduction 89 6.2 Results and discussion 91 6.3 Conlcusion 103 6.4 Experimental Section 104 6.5 References 105 7. Lateral WSe2 p-n junction device electrically controlled by a single-gate electrode 108 7.1. Introduction 108 7.2. Results and discussion 110 7.2.1. Schematic of a single-gated p-n WSe2 device. 110 7.2.2. In-plane WSe2 FET characterization 111 7.2.3. Single-gated lateral WSe2 p-n diode 113 7.2.4. Photovoltaic effect of the lateral WSe2 p-n junction diode 119 7.2.5. Inverter characteristic of the WSe2 device 128 7.3. Conclusion 129 7.4. Experimental Section 130 7.5. References 132 8. 요약문 135
URI
http://dgist.dcollection.net/common/orgView/200000219673
http://hdl.handle.net/20.500.11750/10466
DOI
10.22677/thesis.200000219673
Degree
Doctor
Department
Department of Energy Science and Engineering
University
DGIST
Related Researcher
  • Author Lee, JaeDong Light and Matter Theory Laboratory
  • Research Interests Theoretical Condensed Matter Physics; Ultrafast Dynamics and Optics; Nonequilibrium Phenomena
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Collection:
Department of Energy Science and EngineeringThesesPh.D.


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