Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Lee, Seung-Heon | - |
dc.contributor.author | Oh, Byeong M. | - |
dc.contributor.author | Hong, Chan Yoo | - |
dc.contributor.author | Jung, Su-Kyo | - |
dc.contributor.author | Park, Sung-Ha | - |
dc.contributor.author | Jeon, Gyeong G. | - |
dc.contributor.author | Kwon, Young-Wan | - |
dc.contributor.author | Jang, Seokhoon | - |
dc.contributor.author | Lee, Youngu | - |
dc.contributor.author | Kim, Dongwook | - |
dc.contributor.author | Kim, Jong H. | - |
dc.contributor.author | Kwon, O-Pil | - |
dc.date.accessioned | 2019-10-29T06:41:10Z | - |
dc.date.available | 2019-10-29T06:41:10Z | - |
dc.date.created | 2019-10-21 | - |
dc.date.issued | 2019-10 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/10846 | - |
dc.description.abstract | The formation of stabilized radical anions on organic materials in the solid state is an important issue in radical-based fundamental research and various applications. Herein, for the first time, we report on gas-induced ion-free stable radical anion formation (SRAF) of organic semiconducting solids with high gas selectivities through the use of organic field-effect transistor (OFET) gas sensors and electron spin resonance spectroscopy. In contrast to the previously reported SRAF, which requires either anionic analytes in solution and/or cationic substituents on π-electron-deficient aromatic cores, NDI-EWGs consist of an n-type semiconducting naphthalene diimide (NDI) and various electron-withdrawing groups (EWGs) that exhibit non-ion-involved, gas-selective SRAF in the solid state. In the presence of hard Lewis base gases, NDI-EWG-based OFETs exhibit enhanced conductivity (Current-ON mode) through the formation of an SRAF NDI/gas complex, while in the presence of borderline and soft Lewis base gases, NDI-EWG-based OFETs show decreased conductivity (Current-OFF mode) by the formation of a resistive NDI/gas complex. Organic semiconducting solids with EWGs exhibiting highly gas-selective solid-SRAF constitute a very promising platform for radical-based chemistry and can be used in various applications, such as highly gas-selective probes. © 2019 American Chemical Society. | - |
dc.language | English | - |
dc.publisher | American Chemical Society | - |
dc.title | Gas-Induced Ion-Free Stable Radical Anion Formation of Organic Semiconducting Solids as Highly Gas-Selective Probes | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsami.9b12222 | - |
dc.identifier.scopusid | 2-s2.0-85072849039 | - |
dc.identifier.bibliographicCitation | ACS Applied Materials & Interfaces, v.11, no.39, pp.35904 - 35913 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | stable radical anion formation | - |
dc.subject.keywordAuthor | organic field-effect transistor | - |
dc.subject.keywordAuthor | gas sensors | - |
dc.subject.keywordAuthor | naphthalene diimide | - |
dc.subject.keywordAuthor | pi-electron-deficient aromatic cores | - |
dc.subject.keywordPlus | CHARGE-TRANSFER | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.subject.keywordPlus | NH3 | - |
dc.subject.keywordPlus | PERYLENE | - |
dc.subject.keywordPlus | ELECTRON-TRANSFER | - |
dc.subject.keywordPlus | NAPHTHALENE-DIIMIDE | - |
dc.subject.keywordPlus | AMMONIA SENSORS | - |
dc.citation.endPage | 35913 | - |
dc.citation.number | 39 | - |
dc.citation.startPage | 35904 | - |
dc.citation.title | ACS Applied Materials & Interfaces | - |
dc.citation.volume | 11 | - |
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