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Quantum Efficiency Enhancement Depending on the Thickness of p-GaN Spacer Layer in Localized Surface Plasmon-Enhanced Near-Ultraviolet Light-Emitting Diodes by Using Colloidal Silver Nanoparticles

Title
Quantum Efficiency Enhancement Depending on the Thickness of p-GaN Spacer Layer in Localized Surface Plasmon-Enhanced Near-Ultraviolet Light-Emitting Diodes by Using Colloidal Silver Nanoparticles
Authors
Hong, Sang-HyunKim, Na-YeongKang, Jang-WonKim, Jae-JoonJung, Yen-SookKim, Dong-YuYim, Sang-YoupPark, Seong-Ju
DGIST Authors
Hong, Sang-Hyun; Kim, Na-Yeong; Kang, Jang-Won; Kim, Jae-Joon; Jung, Yen-Sook; Kim, Dong-Yu; Yim, Sang-Youp; Park, Seong-Ju
Issue Date
2020-01
Citation
ECS Journal of Solid State Science and Technology, 9(1), 016003
Type
Article
Article Type
Article
Keywords
WAVELENGTHEMISSIONWELLSUVLEDS
ISSN
2162-8769
Abstract
We demonstrated the dependence on thickness of p-GaN spacer layer in the localized surface plasmons (LSPs)-enhanced near-ultraviolet light-emitting diodes (NUV-LEDs) by pneumatic spray process using colloidal silver (Ag) nanoparticles (NPs). The LSPs-enhanced NUV-LEDs with 10- and 20-nm-thick p-GaN spacer layer showed enhanced internal quantum efficiency (IQE) and reduced effective exciton lifetime by introducing the colloidal Ag NPs. The IQE of LSPs-enhanced NUV-LEDs with 10- and 20-nm-thick p-GaN spacer layer was increased by 18.8% and 24.2%, respectively. These results indicate that the spontaneous emission rate is increased by LSPs-excitons resonant coupling. However, the NUV-LEDs with 40- and 100-nm-thick p-GaN spacer layer showed decreased IQE and extended exciton lifetime due to the evanescent wave property of LSPs field from colloidal Ag NPs. © The Author(s) 2019. Published by ECS..
URI
http://hdl.handle.net/20.500.11750/10945
DOI
10.1149/2.0042001JSS
Publisher
Electrochemical Society, Inc.
Files:
Collection:
Department of Emerging Materials ScienceETC1. Journal Articles


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