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Enhancing exciton diffusion in monolayer WS2 with h-BN bottom layer

Title
Enhancing exciton diffusion in monolayer WS2 with h-BN bottom layer
Authors
Kang, Jang-WonJung, Jin-WooLee, Tae. Jin.Kim, Jung GonCho, Chang-Hee
DGIST Authors
Kang, Jang-Won; Jung, Jin-Woo; Lee, Tae. Jin.; Kim, Jung Gon; Cho, Chang-Hee
Issue Date
2019-11
Citation
Physical Review B, 100(20)
Type
Article
Article Type
Article
Keywords
MOS2ANNIHILATIONMODULATIONDYNAMICSTRIONSVALLEY POLARIZATIONTRANSITION
ISSN
2469-9950
Abstract
We investigated two-dimensional (2D) exciton diffusion in monolayer WS2 on both SiO2 and hexagonal boron nitride (h-BN) layers to identify the exciton diffusion enhanced by the h-BN bottom layer using spatially resolved photoluminescence imaging combined with time-resolved spectroscopy. The WS2 on the h-BN bottom layer shows an exciton diffusion coefficient of 38cm2/s, which is almost 1.7 times that of WS2 on the SiO2 layer. Electrostatic force microscopy confirms that the increase in the 2D exciton diffusion is mainly due to the reduction in the charge impurities and traps on the h-BN surface compared to the SiO2 surface. © 2019 American Physical Society.
URI
http://hdl.handle.net/20.500.11750/11002
DOI
10.1103/PhysRevB.100.205304
Publisher
American Physical Society
Related Researcher
  • Author Cho, Chang-Hee Future Semiconductor Nanophotonics Laboratory
  • Research Interests Semiconductor; Nanophotonics; Light-Matter Interaction
Files:
Collection:
Department of Emerging Materials ScienceETC1. Journal Articles
Department of Emerging Materials ScienceFuture Semiconductor Nanophotonics Laboratory1. Journal Articles


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