Direct full-color photodetectors without sophisticated color filters and interferometric optics have attracted considerable attention for widespread applications. However, difficulties of combining various multispectral semiconductors and improving photon transfer efficiency for high-performance optoelectronic devices have impeded the translation of these platforms into practical realization. Here, we report a low-temperature (<150 degrees C) fabricated two-dimensionally pixelized full-color photodetector by using monolithic integration of various-sized colloidal quantum dots (QDs) and amorphous indium-gallium-zinc-oxide semiconductors. By introducing trap-reduced chelating chalcometallate ligands, highly efficient charge carrier transport and photoresistor-free fine-patterning of QD layers were successfully realized, exhibiting extremely high photodetectivity (>4.2 x 10(17) Jones) and photo-responsivity (>8.3 x 10(3) A W-1) in a broad range of wavelengths (365 to 13(10) nm). On the basis of these technologies, a wavelength discriminable phototransistor circuit array (>600 phototransistors) was implemented on a skin-like soft platform, which is expected to be a versatile and scalable approach for wide spectral image sensors and human-oriented biological devices.
