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dc.contributor.author Park, Jinwan -
dc.contributor.author Yoshida, Kenji -
dc.contributor.author An, Sung Jin -
dc.contributor.author Hirakawa, Kazuhiko -
dc.contributor.author Jung, Minkyung -
dc.contributor.author Seo, Jungpil -
dc.date.accessioned 2020-02-27T09:12:18Z -
dc.date.available 2020-02-27T09:12:18Z -
dc.date.created 2020-01-28 -
dc.date.issued 2020-03 -
dc.identifier.citation Current Applied Physics, v.20, no.3, pp.451 - 455 -
dc.identifier.issn 1567-1739 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/11424 -
dc.description.abstract Van der Waals layered transition metal dichalcogenides (TMDCs), as atomically flat two-dimensional materials, have been studied extensively in both fundamental science and application fields in recent years. The reduced-dimensional properties of TMDCs not only provide a route for the fabricating of efficient field effect transistors and optoelectronic devices but also suggest the possibility of the devices that utilize quantum coherency. In this work, we characterize the electron transport properties of ReS2, one of the TMDCs, at both room temperature and low temperature. Of particular note, we measured strong quantum conductance oscillations as a function of the gate voltages and source-drain voltages at reduced temperature, which is evidence of quantum coherent transport. This work unambiguously establishes ReS2 as a promising candidate for future quantum materials. © 2020 -
dc.language English -
dc.publisher Korean Physical Society -
dc.title Quantum interference effect in few-layered transition metal dichalcogenide -
dc.type Article -
dc.identifier.doi 10.1016/j.cap.2020.01.007 -
dc.identifier.wosid 000509752300013 -
dc.identifier.scopusid 2-s2.0-85077745635 -
dc.type.local Article(Overseas) -
dc.type.rims ART -
dc.description.journalClass 1 -
dc.citation.publicationname Current Applied Physics -
dc.identifier.kciid ART002569505 -
dc.contributor.nonIdAuthor Park, Jinwan -
dc.contributor.nonIdAuthor Yoshida, Kenji -
dc.contributor.nonIdAuthor An, Sung Jin -
dc.contributor.nonIdAuthor Hirakawa, Kazuhiko -
dc.identifier.citationVolume 20 -
dc.identifier.citationNumber 3 -
dc.identifier.citationStartPage 451 -
dc.identifier.citationEndPage 455 -
dc.identifier.citationTitle Current Applied Physics -
dc.type.journalArticle Article -
dc.description.isOpenAccess N -
dc.subject.keywordAuthor TMDC -
dc.subject.keywordAuthor ReS2 -
dc.subject.keywordAuthor Quantum interference -
dc.subject.keywordAuthor Fabry-Perot -
dc.subject.keywordAuthor UCF -
dc.subject.keywordPlus FIELD-EFFECT TRANSISTORS -
dc.subject.keywordPlus PHASE-TRANSITION -
dc.subject.keywordPlus SEMICONDUCTOR -
dc.contributor.affiliatedAuthor Park, Jinwan -
dc.contributor.affiliatedAuthor Yoshida, Kenji -
dc.contributor.affiliatedAuthor An, Sung Jin -
dc.contributor.affiliatedAuthor Hirakawa, Kazuhiko -
dc.contributor.affiliatedAuthor Jung, Minkyung -
dc.contributor.affiliatedAuthor Seo, Jungpil -

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