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Controllable p-n junctions in three-dimensional Dirac semimetal Cd3As2 nanowires

Title
Controllable p-n junctions in three-dimensional Dirac semimetal Cd3As2 nanowires
Authors
Bayogan, Janice RuthPark, KidongSiu, Zhuo BinAn, Sung JinTang, Chiu-ChunZhang, Xiao-XiaoSong, Man SukPark, JeungheeJalil, Mansoor B. A.Nagaosa, NaotoHirakawa, KazuhikoSchoenenberger, ChristianSeo, JungpilJung, Minkyung
DGIST Authors
Seo, JungpilJung, Minkyung
Issue Date
2020-05
Citation
Nanotechnology, 31(20), 205001
Type
Article
Article Type
Article
Author Keywords
3D Dirac semimetalCd3As2p-n junctionnanowirequantum dot
Keywords
NEGATIVE MAGNETORESISTANCEULTRAHIGH MOBILITYINTERFERENCE
ISSN
0957-4484
Abstract
We demonstrate a controllable p-n junction in a three-dimensional Dirac semimetal (DSM) Cd3As2 nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n-n and p-p) and bipolar (n-p and n-p) regimes, where p-n junctions are formed. The conductance in the p-n junction regimes decreases drastically when a magnetic field is applied perpendicular to the nanowire. In these regimes, the device shows quantum dot behavior, whereas the device exhibits conductance plateaus in the n-n regime at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics. © 2020 IOP Publishing Ltd.
URI
http://hdl.handle.net/20.500.11750/11594
DOI
10.1088/1361-6528/ab6dfe
Publisher
Institute of Physics Publishing
Related Researcher
  • Author Seo, Jungpil Nanospm Lab(Advanced Materials Research Group)
  • Research Interests Topological Matters; High Tc Superconductors; Low dimensional Quantum Matters
Files:
There are no files associated with this item.
Collection:
Department of Emerging Materials ScienceNanospm Lab(Advanced Materials Research Group)1. Journal Articles
Division of Nanotechnology1. Journal Articles


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