Cited 3 time in webofscience Cited 4 time in scopus

Enhanced charge-transportation properties of low-temperature processed Al-doped ZnO and its impact on PV cell parameters of organic-inorganic perovskite solar cells

Title
Enhanced charge-transportation properties of low-temperature processed Al-doped ZnO and its impact on PV cell parameters of organic-inorganic perovskite solar cells
Authors
Khan, FirozKim, Jae Hyeon
DGIST Authors
Kim, Jae Hyeon
Issue Date
2020-02
Citation
Solid-State Electronics, 164, 107714
Type
Article
Article Type
Article
Author Keywords
Perovskite solar cellElectron transporting layerAl-doped ZnOTime-resolved photoluminescencePV cell parameters
Keywords
EFFICIENCY ENHANCEMENTHOLE-CONDUCTORTHIN-FILMSPHOTOLUMINESCENCEPERFORMANCELAYER
ISSN
0038-1101
Abstract
The present work highlights the potential of low-temperature processed Al-doped ZnO (AZO) nanoparticles (NPs) for application in organic-inorganic perovskite solar cells (PSCs). ZnO nanostructured electron-transporting layer (ETL)-based PSCs are superior to ZnO film-based PSCs owing to their relatively lower cost, simpler deposition process, milder sintering temperatures, and higher electron mobility. Moreover, the PSCs based on ZnO nanostructure ETLs are more stable than ZnO film-based PSCs because perovskite films can be easily decomposed into PbI2 during the annealing process. Al doping in ZnO can reduce the recombination at the ETL/perovskite interface. Thus, low-temperature processed AZO NPs were used as the ETLs for PSCs, and the effects of Al doping on the performance and photovoltaic parameters of PSCs were investigated. The lowest transmission loss was observed for the AZO sample with an Al/Zn molar ratio of 2%, while a higher transportation rate was obtained for the Al/Zn molar ratio of 5%. The effectiveness of Al doping was demonstrated by a conversion efficiency (η) of 13.91% for the Al/Zn molar ratio of 2% (η = 12.28% for ZnO). Moreover, the short-circuit current density (from 18.40 to 19.36 mA/cm2) and fill factor (from 67.87 to 71.18%) increased. The value of shunt resistance gradually increased (from ~799 to 1248 Ωcm2) by Al doping. The values of diode ideality factor (from 2.3221 to 2.3175) and reverse saturation current density (from 11.97 × 10−10 to 7.95 × 10−10 A/cm2) decreased by Al doping, indicating a reduction in the recombination loss. The lowest series resistance was obtained for Al/Zn molar ratio of 2%. © 2019 Elsevier Ltd
URI
http://hdl.handle.net/20.500.11750/12217
DOI
10.1016/j.sse.2019.107714
Publisher
Elsevier Ltd
Related Researcher
Files:
There are no files associated with this item.
Collection:
Division of Energy Technology1. Journal Articles


qrcode mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE