Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Min Su | ko |
dc.contributor.author | Seo, Jae Hwa | ko |
dc.contributor.author | Lee, Sang Ho | ko |
dc.contributor.author | Jang, Hwan Soo | ko |
dc.contributor.author | Kang, In Man | ko |
dc.date.accessioned | 2020-09-22T04:10:57Z | - |
dc.date.available | 2020-09-22T04:10:57Z | - |
dc.date.created | 2020-09-02 | - |
dc.date.issued | 2020-07 | - |
dc.identifier.citation | IEEE Access, v.8, pp.139156 - 139160 | - |
dc.identifier.issn | 2169-3536 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/12393 | - |
dc.description.abstract | To increase the radio-frequency (RF) performance of AlGaN/GaN-based fin-type high electron mobility transistors (HEMTs), a novel T-gate process was developed and applied to fabricate a device with high RF performance. In a single lithography process, the applied T-gate process shows a technique for forming a T-gate using the reactivity difference of several photoresists. The fabricated device has a steep fin width (W-fin) of 130 nm, a fin height (H-fin) of 250 nm, and a gate length (L-G) of 190 nm. The device exhibits a low leakage current (I-off) of 6.6 x 10(-10) A/mm and a high I-on/I-off current ratio of 4.7 x 10(8). Moreover, the fabricated device achieved a high cut-off frequency (f(T)) of 9.7 GHz and a very high maximum oscillation frequency (f(max)) of 27.8 GHz. The f(max) value of the proposed device is 138% higher than that of GaN-based fin-type HEMTs without T-gate. | - |
dc.language | English | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/ACCESS.2020.3011103 | - |
dc.identifier.wosid | 000557771600001 | - |
dc.identifier.scopusid | 2-s2.0-85090384683 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.contributor.nonIdAuthor | Cho, Min Su | - |
dc.contributor.nonIdAuthor | Seo, Jae Hwa | - |
dc.contributor.nonIdAuthor | Lee, Sang Ho | - |
dc.contributor.nonIdAuthor | Kang, In Man | - |
dc.identifier.citationVolume | 8 | - |
dc.identifier.citationStartPage | 139156 | - |
dc.identifier.citationEndPage | 139160 | - |
dc.identifier.citationTitle | IEEE Access | - |
dc.type.journalArticle | Article | - |
dc.description.isOpenAccess | Y | - |
dc.subject.keywordAuthor | E-beam lithography | - |
dc.subject.keywordAuthor | maximum oscillation frequency | - |
dc.subject.keywordAuthor | FinFET | - |
dc.subject.keywordAuthor | Gallium compounds | - |
dc.subject.keywordAuthor | nanofabrication | - |
dc.subject.keywordAuthor | nanolithography | - |
dc.subject.keywordAuthor | high electron mobility transistor | - |
dc.subject.keywordAuthor | T-gate | - |
dc.subject.keywordPlus | LINEARITY | - |
dc.subject.keywordPlus | IMPACT | - |
dc.subject.keywordPlus | F(T) | - |