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Division of Nanotechnology
1. Journal Articles
Phase Controlled Growth of Cd3As2 Nanowires and Their Negative Photoconductivity
Park, Kidong
;
Jung, Minkyung
;
Kim, Doyeon
;
Bayogan, Janice Ruth
;
Lee, Jong Hyun
;
An, Sung Jin
;
Seo, Jungpil
;
Seo, Jaemin
;
Ahn, Jae-Pyoung
;
Park, Jeunghee
Division of Nanotechnology
1. Journal Articles
Department of Physics and Chemistry
Nanospm Lab(Advanced Materials Research Group)
1. Journal Articles
Division of Nanotechnology
Quantum Nanoelectronic Devices Lab
1. Journal Articles
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Title
Phase Controlled Growth of Cd3As2 Nanowires and Their Negative Photoconductivity
DGIST Authors
Jung, Minkyung
;
Seo, Jungpil
Issued Date
2020-07
Citation
Park, Kidong. (2020-07). Phase Controlled Growth of Cd3As2 Nanowires and Their Negative Photoconductivity. doi: 10.1021/acs.nanolett.0c01010
Type
Article
Article Type
Article
Author Keywords
Cadmium arsenide
;
nanowires
;
Dirac semimetal
;
body centered tetragonal phase
;
primitive tetragonal phase
;
photoconductivity
Keywords
SEMIMETAL
;
MAGNETORESISTANCE
;
TRANSPORT
;
MOBILITY
;
CRYSTAL
;
SINGLE
ISSN
1530-6984
Abstract
The bottom-up synthesis process often allows the growth of metastable phase nanowires instead of the thermodynamically stable phase. Herein, we synthesized Cd3As2 nanowires with a controlled three-dimensional Dirac semimetal phase using a chemical vapor transport method. Three different phases such as the body centered tetragonal (bct), and two metastable primitive tetragonal (P42/nbc and P42/nmc) phases were identified. The conversion between three phases (bct → P42/nbc → P42/nmc) was achieved by increasing the growth temperature. The growth direction is [110] for bct and P42/nbc and [100] for P42/nmc, corresponding to the same crystallographic axis. Field effect transistors and photodetector devices showed the nearly same electrical and photoelectrical properties for three phases. Differential conductance measurement confirms excellent electron mobility (2 × 104 cm2/(V s) at 10 K). Negative photoconductance was first observed, and the photoresponsivity reached 3 × 104 A/W, which is ascribed to the surface defects acting as trap sites for the photogenerated electrons. Copyright © 2020 American Chemical Society.
URI
http://hdl.handle.net/20.500.11750/12538
DOI
10.1021/acs.nanolett.0c01010
Publisher
American Chemical Society
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