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Tunable resistivity of correlated VO2(A) and VO2(B) via tungsten doping

Title
Tunable resistivity of correlated VO2(A) and VO2(B) via tungsten doping
Authors
Choi, SongheeAhn, GihyeonMoon, Soon JaeLee, Shinbuhm
DGIST Authors
Lee, Shinbuhm
Issue Date
2020-06
Citation
Scientific Reports, 10(1), 9721
Type
Article
Article Type
Article
Keywords
METAL-INSULATOR-TRANSITIONVANADIUM
ISSN
2045-2322
Abstract
Applications of correlated vanadium dioxides VO2(A) and VO2(B) in electrical devices are limited due to the lack of effective methods for tuning their fundamental properties. We find that the resistivity of VO2(A) and VO2(B) is widely tunable by doping them with tungsten ions. When x < 0.1 in V1−xWxO2(A), the resistivity decreases drastically by four orders of magnitude with increasing x, while that of V1−xWxO2(B) shows the opposite behaviour. Using spectroscopic ellipsometry and X-ray photoemission spectroscopy, we propose that correlation effects are modulated by either chemical-strain-induced redistribution of V−V distances or electron-doping-induced band filling in V1−xWxO2(A), while electron scattering induced by disorder plays a more dominant role in V1−xWxO2(B). The tunable resistivity makes correlated VO2(A) and VO2(B) appealing for next-generation electronic devices. © 2020, The Author(s).
URI
http://hdl.handle.net/20.500.11750/12600
DOI
10.1038/s41598-020-66439-2
Publisher
Nature Publishing Group
Related Researcher
  • Author Lee, Shinbuhm Multifunctional films and nanostructures Lab
  • Research Interests Multifunctional films; Experimental condensed matter physics
Files:
Collection:
Department of Emerging Materials ScienceMultifunctional films and nanostructures Lab1. Journal Articles


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