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dc.contributor.author 김준우 -
dc.contributor.author 이광준 -
dc.contributor.author 정재욱 -
dc.contributor.author 최병대 -
dc.date.accessioned 2021-04-26T07:01:35Z -
dc.date.available 2021-04-26T07:01:35Z -
dc.date.created 2018-03-29 -
dc.date.issued 2012-06 -
dc.identifier.citation 대한전자공학회, v.35, no.1, pp.269 - 271 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/13398 -
dc.identifier.uri http://www.dbpia.co.kr/Journal/PDFViewNew?id=NODE02275002&prevPathCode= -
dc.description.abstract In this study, we investigated the electrical characteristics of transparent amorphous indium gallium zinc oxide (a-IGZO) TFT in short channel region. In order to reduce the contact resistance, Ar plasma treatment was performed on the source drain region of a-IGZO TFT. The contact resistance of a-IGZO thin film was reduced from 330 ȳȒ㎝ to 150 ȳȒ㎝ after Ar plasma treatment. Upon their exposure to Ar plasma, carrier concentraion of the a-IGZO thin films was increased due to the increase of oxygen vacancy. -
dc.language Korean -
dc.publisher 대한전자공학회 -
dc.title Source / Drain 투명 전극을 적용한 a-IGZO TFT의 Ar Plasma 처리 효과 -
dc.title.alternative Effect on Ar Plasma Treatment for a-IGZO TFT with Transparent Source/Drain Electrodes -
dc.type Article -
dc.type.local Article(Domestic) -
dc.type.rims ART -
dc.description.journalClass 2 -
dc.citation.publicationname 대한전자공학회 -
dc.contributor.nonIdAuthor 김준우 -
dc.contributor.nonIdAuthor 이광준 -
dc.identifier.citationVolume 35 -
dc.identifier.citationNumber 1 -
dc.identifier.citationStartPage 269 -
dc.identifier.citationEndPage 271 -
dc.identifier.citationTitle 대한전자공학회 -
dc.description.isOpenAccess N -
dc.contributor.affiliatedAuthor 김준우 -
dc.contributor.affiliatedAuthor 이광준 -
dc.contributor.affiliatedAuthor 정재욱 -
dc.contributor.affiliatedAuthor 최병대 -
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ETC 1. Journal Articles
Division of AI, Big data and Block chain 1. Journal Articles

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