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dc.contributor.author Chejanovsky, Nathan -
dc.contributor.author Mukherjee, Amlan -
dc.contributor.author Geng, Jianpei -
dc.contributor.author Chen, Yu-Chen -
dc.contributor.author Kim, Youngwook -
dc.contributor.author Denisenko, Andrej -
dc.contributor.author Finkler, Amit -
dc.contributor.author Taniguchi, Takashi -
dc.contributor.author Watanabe, Kenji -
dc.contributor.author Dasari, Durga Bhaktavatsala Rao -
dc.contributor.author Auburger, Philipp -
dc.contributor.author Gali, Adam -
dc.contributor.author Smet, Jurgen H. -
dc.contributor.author Wrachtrup, Joerg -
dc.date.accessioned 2021-06-28T20:03:52Z -
dc.date.available 2021-06-28T20:03:52Z -
dc.date.created 2021-05-25 -
dc.date.issued 2021-08 -
dc.identifier.issn 1476-1122 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/13774 -
dc.description.abstract A plethora of single-photon emitters have been identified in the atomic layers of two-dimensional van der Waals materials1–8. Here, we report on a set of isolated optical emitters embedded in hexagonal boron nitride that exhibit optically detected magnetic resonance. The defect spins show an isotropic ge-factor of ~2 and zero-field splitting below 10 MHz. The photokinetics of one type of defect is compatible with ground-state electron-spin paramagnetism. The narrow and inhomogeneously broadened magnetic resonance spectrum differs significantly from the known spectra of in-plane defects. We determined a hyperfine coupling of ~10 MHz. Its angular dependence indicates an unpaired, out-of-plane delocalized π-orbital electron, probably originating from substitutional impurity atoms. We extracted spin–lattice relaxation times T1 of 13–17 μs with estimated spin coherence times T2 of less than 1 μs. Our results provide further insight into the structure, composition and dynamics of single optically active spin defects in hexagonal boron nitride. © 2021, The Author(s), under exclusive licence to Springer Nature Limited. -
dc.language English -
dc.publisher Nature Publishing Group -
dc.title Single-spin resonance in a van der Waals embedded paramagnetic defect -
dc.type Article -
dc.identifier.doi 10.1038/s41563-021-00979-4 -
dc.identifier.wosid 000648004900004 -
dc.identifier.scopusid 2-s2.0-85105338917 -
dc.identifier.bibliographicCitation Nature Materials, v.20, no.8, pp.1079 - 1084 -
dc.description.isOpenAccess FALSE -
dc.citation.endPage 1084 -
dc.citation.number 8 -
dc.citation.startPage 1079 -
dc.citation.title Nature Materials -
dc.citation.volume 20 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.relation.journalResearchArea Chemistry; Materials Science; Physics -
dc.relation.journalWebOfScienceCategory Chemistry, Physical; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter -
dc.type.docType Article -
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Department of Physics and Chemistry Topological Quantum Device Lab 1. Journal Articles

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