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Semiconductor-less vertical transistor with I-ON/I-OFF of 10(6)

Title
Semiconductor-less vertical transistor with I-ON/I-OFF of 10(6)
Authors
Lee, Jun-HoShin, Dong HoonYang, HeejunJeong, Nae BongPark, Do-HyunWatanabe, KenjiTaniguchi, TakashiKim, EunahLee, Sang WookJhang, Sung HoPark, Bae HoKuk, YoungChung, Hyun-Jong
DGIST Authors
Lee, Jun-Ho; Shin, Dong Hoon; Yang, Heejun; Jeong, Nae Bong; Park, Do-Hyun; Watanabe, Kenji; Taniguchi, Takashi; Kim, Eunah; Lee, Sang Wook; Jhang, Sung Ho; Park, Bae Ho; Kuk, Young; Chung, Hyun-Jong
Issue Date
2021-02
Citation
Nature Communications, 12(1), 1000
Type
Article
ISSN
2041-1723
Abstract
Semiconductors have long been perceived as a prerequisite for solid-state transistors. Although switching principles for nanometer-scale devices have emerged based on the deployment of two-dimensional (2D) van der Waals heterostructures, tunneling and ballistic currents through short channels are difficult to control, and semiconducting channel materials remain indispensable for practical switching. In this study, we report a semiconductor-less solid-state electronic device that exhibits an industry-applicable switching of the ballistic current. This device modulates the field emission barrier height across the graphene-hexagonal boron nitride interface with ION/IOFF of 106 obtained from the transfer curves and adjustable intrinsic gain up to 4, and exhibits unprecedented current stability in temperature range of 15–400 K. The vertical device operation can be optimized with the capacitive coupling in the device geometry. The semiconductor-less switching resolves the long-standing issue of temperature-dependent device performance, thereby extending the potential of 2D van der Waals devices to applications in extreme environments. © 2021, The Author(s).
URI
http://hdl.handle.net/20.500.11750/13828
DOI
10.1038/s41467-021-21138-y
Publisher
Nature Publishing Group
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