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Interface Defect Engineering of a Large-Scale CVD-Grown MoS2 Monolayer via Residual Sodium at the SiO2/Si Substrate

Title
Interface Defect Engineering of a Large-Scale CVD-Grown MoS2 Monolayer via Residual Sodium at the SiO2/Si Substrate
Author(s)
Han, Sang WookYun, Won SeokWoo, Whang JeKim, HyungjunPark, JusangHwang, Young HunNguyen, Tri KhoaLe, Chinh TamKim, Yong SooKang, ManilAhn, Chang WonHong, Soon Cheol
Issued Date
2021-07
Citation
Advanced Materials Interfaces, v.8, no.14, pp.2100428
Type
Article
Author Keywords
alkali metal halide-assisted chemical vapor depositioninterface defect engineeringintrinsic semiconductor propertieslarge-scale 2D monolayersmolybdenum disulfide
Keywords
CONTACTSSULFUR-VACANCYATOMIC LAYERSSTATEPHOTOLUMINESCENCEPHOTODETECTORSTRANSITIONDEPOSITION
ISSN
2196-7350
Abstract
Alkali metal halide-assisted chemical vapor deposition (CVD) methods can produce wafer-scale uniform monolayer transition metal dichalcogenides (TMDs). Further defect engineering is necessary to obtain high-performance functional devices. While defect engineering has focused on the surface of the monolayer TMDs or the contact property, interface defect engineering is rare and non-trivial. Based on a NaCl-assisted CVD-grown large-scale uniform MoS2 monolayer on SiO2/Si substrate, a trace amount of Na cations is present, residing at the SiO2 substrate during the CVD-growth process and contributes to the n-type doping into the supported monolayer MoS2. Furthermore, the residual Na cations are electrically moved toward the bottom side of monolayer MoS2 to passivate the interfacial defects.
URI
http://hdl.handle.net/20.500.11750/15371
DOI
10.1002/admi.202100428
Publisher
John Wiley and Sons Ltd
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Division of Nanotechnology 1. Journal Articles

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