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dc.contributor.author Bakhmet'ev, M. V. -
dc.contributor.author Talantsev, A. D. -
dc.contributor.author Morgunov, R. B. -
dc.date.accessioned 2021-10-01T06:00:04Z -
dc.date.available 2021-10-01T06:00:04Z -
dc.date.created 2021-07-16 -
dc.date.issued 2021-05 -
dc.identifier.issn 1063-7761 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/15373 -
dc.description.abstract The NiFe/Cu/IrMn heterostructures with a variable number of interlayer Cu atoms exhibit a sharp change in the exchange-bias field, the coercive force, and the unidirectional anisotropy field at an effective copper layer thickness t(Cu) approximate to 0.5 nm, which corresponds to incomplete coverage of the interface, i.e., to an island deposited structure. The symmetry of the angular dependence of the ferromagnetic resonance changes sharply at an incompletely coated interface (t(Cu) = 0.5 nm), which corresponds to a transition from isolated islands to a magnetic fractal structure. This phenomenon, which can be called a "magnetic" percolation threshold is not related to the electrical resistance of the heterostructure, which decreases sharply at a significantly larger effective threshold copper layer thickness (t(Cu) = 1.3 nm) when the interface is completely covered. -
dc.language English -
dc.publisher Maik Nauka/Interperiodica Publishing -
dc.title Sharp Change in the Exchange Bias and the Magnetic Anisotropy Symmetry at a Subthreshold Interlayer Copper Content in NiFe/Cu/IrMn Heterostructures -
dc.type Article -
dc.identifier.doi 10.1134/S1063776121050010 -
dc.identifier.scopusid 2-s2.0-85111084677 -
dc.identifier.bibliographicCitation Journal of Experimental and Theoretical Physics, v.132, no.5, pp.852 - 864 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordPlus ELECTRICAL-CONDUCTIVITY -
dc.subject.keywordPlus DC CONDUCTIVITY -
dc.subject.keywordPlus DEPENDENCE -
dc.subject.keywordPlus LAYER -
dc.subject.keywordPlus AC -
dc.citation.endPage 864 -
dc.citation.number 5 -
dc.citation.startPage 852 -
dc.citation.title Journal of Experimental and Theoretical Physics -
dc.citation.volume 132 -
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