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dc.contributor.author Kim, Youngwook -
dc.contributor.author Moon, Pilkyung -
dc.contributor.author Watanabe, Kenji -
dc.contributor.author Taniguchi, Takashi -
dc.contributor.author Smet, Jurgen H. -
dc.date.accessioned 2021-10-15T06:30:22Z -
dc.date.available 2021-10-15T06:30:22Z -
dc.date.created 2021-06-14 -
dc.date.issued 2021-05 -
dc.identifier.issn 1530-6984 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/15509 -
dc.description.abstract We report on the quantum Hall effect in two stacked graphene layers rotated by 2°. The tunneling strength among the layers can be varied from very weak to strong via the mechanism of magnetic breakdown when tuning the density. Odd-integer quantum Hall physics is not anticipated in the regime of suppressed tunneling for balanced layer densities, yet it is observed. We interpret this as a signature of Coulomb interaction induced interlayer coherence and Bose-Einstein condensation of excitons that form at half filling of each layer. A density imbalance gives rise to reentrant behavior due to a phase transition from the interlayer coherent state to incompressible behavior caused by simultaneous condensation of both layers in different quantum Hall states. With increasing overall density, magnetic breakdown gains the upper hand. As a consequence of the enhanced interlayer tunneling, the interlayer coherent state and the phase transition vanish. © 2021 American Chemical Society. All rights reserved. -
dc.language English -
dc.publisher American Chemical Society -
dc.title Odd Integer Quantum Hall States with Interlayer Coherence in Twisted Bilayer Graphene -
dc.type Article -
dc.identifier.doi 10.1021/acs.nanolett.1c00360 -
dc.identifier.wosid 000657242300015 -
dc.identifier.scopusid 2-s2.0-85106494222 -
dc.identifier.bibliographicCitation Nano Letters, v.21, no.10, pp.4249 - 4254 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordAuthor Bose−Einstein condensation -
dc.subject.keywordAuthor interlayer coherence -
dc.subject.keywordAuthor twisted bilayer graphene -
dc.subject.keywordAuthor quantum Hall effect -
dc.subject.keywordPlus Half-filling -
dc.subject.keywordPlus Magnetic breakdown -
dc.subject.keywordPlus Odd integers -
dc.subject.keywordPlus Quantum hall -
dc.subject.keywordPlus Quantum Hall state -
dc.subject.keywordPlus Twisted bilayers -
dc.subject.keywordPlus Quantum theory -
dc.subject.keywordPlus Bose-Einstein condensation -
dc.subject.keywordPlus Graphene -
dc.subject.keywordPlus Quantum Hall effect -
dc.subject.keywordPlus Statistical mechanics -
dc.subject.keywordPlus Coherent state -
dc.subject.keywordPlus Graphene layers -
dc.citation.endPage 4254 -
dc.citation.number 10 -
dc.citation.startPage 4249 -
dc.citation.title Nano Letters -
dc.citation.volume 21 -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science; Physics -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter -
dc.type.docType Article -
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Department of Physics and Chemistry Nanomaterials and Quantum Device Lab 1. Journal Articles

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