Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, Kyung-Tae | - |
dc.contributor.author | Lee, Keon Woo | - |
dc.contributor.author | Moon, Sanghee | - |
dc.contributor.author | Park, Joon Bee | - |
dc.contributor.author | Park, Chan-Yong | - |
dc.contributor.author | Nam, Seung-Ji | - |
dc.contributor.author | Kim, Jaehyun | - |
dc.contributor.author | Lee, Myoung-Jae | - |
dc.contributor.author | Heo, Jae Sang | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.date.accessioned | 2021-10-17T15:00:03Z | - |
dc.date.available | 2021-10-17T15:00:03Z | - |
dc.date.created | 2021-07-08 | - |
dc.date.issued | 2021-06 | - |
dc.identifier.issn | 1996-1944 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/15583 | - |
dc.description.abstract | Semiconducting single-walled carbon nanotubes (s-SWCNTs) have gathered significant interest in various emerging electronics due to their outstanding electrical and mechanical properties. Although large-area and low-cost fabrication of s-SWCNT field effect transistors (FETs) can be easily achieved via solution processing, the electrical performance of the solution-based s-SWCNT FETs is often limited by the charge transport in the s-SWCNT networks and interface between the s-SWCNT and the dielectrics depending on both s-SWCNT solution synthesis and device architecture. Here, we investigate the surface and interfacial electro-chemical behaviors of s-SWCNTs. In addition, we propose a cost-effective and straightforward process capable of minimizing polymers bound to s-SWCNT surfaces acting as an interfering element for the charge carrier transport via a heat-assisted purification (HAP). With the HAP treated s-SWCNTs, we introduced conformal dielectric configuration for s-SWCNT FETs, which are explored by a carefully designed wide array of electrical and chemical characterizations with finite-element analysis (FEA) computer simulation. For more favorable gate-field-induced surface and interfacial behaviors of s-SWCNT, we implemented conformally gated highly capacitive s-SWCNT FETs with ion-gel dielectrics, demonstrating field-effect mobility of similar to 8.19 cm(2)/V.s and on/off current ratio of similar to 10(5) along with negligible hysteresis. © 2021 by the authors. Licensee MDPI, Basel, Switzerland. | - |
dc.language | English | - |
dc.publisher | MDPI AG | - |
dc.title | Conformally Gated Surface Conducting Behaviors of Single-Walled Carbon Nanotube Thin-Film-Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.3390/ma14123361 | - |
dc.identifier.scopusid | 2-s2.0-85129898954 | - |
dc.identifier.bibliographicCitation | Materials, v.14, no.12 | - |
dc.description.isOpenAccess | TRUE | - |
dc.subject.keywordAuthor | single-walled carbon nanotube (SWCNTs) | - |
dc.subject.keywordAuthor | high purity SWCNT separation process | - |
dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
dc.subject.keywordPlus | HYSTERESIS | - |
dc.subject.keywordPlus | SEPARATION | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CONJUGATED POLYMERS | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | TOP-GATE | - |
dc.subject.keywordPlus | DISPERSION | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.citation.number | 12 | - |
dc.citation.title | Materials | - |
dc.citation.volume | 14 | - |
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