DGIST Scholar: Cross-linkable hole transport materials for solution-processed light emitting diodes

Department of Energy Science and Engineering Theses Master

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Cross-linkable hole transport materials for solution-processed light emitting diodes

Title: Cross-linkable hole transport materials for solution-processed light emitting diodes

Subject: QLED, cross-linkable hole transport material, Solution-processed, 양자점 발광 다이오드, 용액 공정, 전하 수송 물질, 열 가교성 전하 수송 물질

Description: QLED, cross-linkable hole transport material, Solution-processed, 양자점 발광 다이오드, 용액 공정, 전하 수송 물질, 열 가교성 전하 수송 물질

Table Of Contents: Ⅰ. INTRODUCTION 1
Ⅱ. THEORICAL BACKGROUNDS 4
2.1 Quantum dot light emitting diodes (QLED) 4
2.1.1 Structure of QLED 4
2.1.2 Working mechanism of QLED 6
2.2 Organic and inorganic materials for QLED 7
2.2.1 Hole transport materials 7
2.2.2 Electron transport materials 8
2.2.3 Quantum dots 8
2.2.4 Vilsmeier-Haack reaction 10
2.2.5 Wittig reaction 11
2.2.6 Suzuki reaction 12
2.3 Cross-linking 13
2.3.1 Thermal cross-linking 14
2.3.2 Photo cross-linking 15
2.4 Fabrication process of QLED 15
2.4.1 Vacuum thermal evaporation 15
2.4.2 Solution process 16
Ⅲ. EXPERIMENTAL 18
3.1 Measurement and Characterization 18
3.2 Synthesis 18
3.3 Fabrication of Device 32
3.3.1 Fabrication of Hole-only Device 32
3.3.2 Fabrication of Green QLED 32
ⅠV. RESULT AND DISCUSSION 35
4.1 Design of HTMs 35
4.2 Thermal Properties 37
4.3 Cross-linking Properties 40
4.4 Optical Properties 41
4.5 Electrochemical Properties 43
4.6 UPS Analysis 45
4.7 Hole Mobilities 47
4.8 TRPL Analysis 49
4.9 AFM Analysis 51
4.10 Green QLED Performance 52
V. CONCLUSION 57
REFERENCES 58
SUMMARY 66