Title

Deep HOMO Furan-Substituted Hole-Transporting Materials for Highest Open Circuit Voltage PbS Quantum Dot Solar Cells

Alternative Title

깊은 점유된 분자궤도함수의 퓨란 고분자 정공수송물질을 통한 황화납 양자점 태양전지의 개방전압 향상

DGIST Authors

Duck Hoon Lee ; Jongmin Choi ; Younghoon Kim

Advisor

최종민

Co-Advisor(s)

Younghoon Kim

Issued Date

2022

Awarded Date

2022/02

Citation

Duck Hoon Lee. (2022). Deep HOMO Furan-Substituted Hole-Transporting Materials for Highest Open Circuit Voltage PbS Quantum Dot Solar Cells. doi: 10.22677/thesis.200000595587

Type

Thesis

Subject

PbS Quantum dot, Hole transport material, EDT, Furan, Deep HOMO, Green solvents, 황화납 양자점, 정공수송물질, 퓨란, 깊은 점유된 분자궤도함수, 친환경 용매

Description

PbS Quantum dot, Hole transport material, EDT, Furan, Deep HOMO, Green solvents, 황화납 양자점, 정공수송물질, 퓨란, 깊은 점유된 분자궤도함수, 친환경 용매

Table Of Contents

Ⅰ. Introduction 1
Ⅱ. Experimental 6
Ⅲ. Results and discussion 9
Ⅳ. Conclusion 24
Ⅴ. References 26

URI

http://dgist.dcollection.net/common/orgView/200000595587
http://hdl.handle.net/20.500.11750/16266

DOI

10.22677/thesis.200000595587

Degree

Master

Department

Energy Science & Engineering

Publisher

DGIST

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