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dc.contributor.author Park, Jun Cheol -
dc.contributor.author Lee, Kyoung Ryun -
dc.contributor.author Heo, Hoseok -
dc.contributor.author Kwon, Se-Hun -
dc.contributor.author Kwon, Jung-Dae -
dc.contributor.author Lee, Myoung-Jae -
dc.contributor.author Jeon, Woojin -
dc.contributor.author Jeong, Seong-Jun -
dc.contributor.author Ahn, Ji-Hoon -
dc.date.available 2017-05-11T01:41:00Z -
dc.date.created 2017-04-10 -
dc.date.issued 2016-07 -
dc.identifier.issn 1528-7483 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/1635 -
dc.description.abstract Manufacturing high-quality, two-dimensional (2D), layered materials with crystal-growth techniques is an important challenge for the advancement of 2D communication technologies. In this study, a simple method was developed for synthesizing 2D nanocrystals based on the model system of SnS2. The method involves the sulfurization of a metal oxide to a metal chalcogenide, which subsequently acts as a source of vapors for the growth of 2D crystals. The effect of the annealing conditions on the thermal sulfurization of SnO2 powder was investigated. The results showed that pure SnS2 powder could be obtained in a N2 atmosphere at 700 °C. SnS2 nanocrystals were successfully synthesized from the as-prepared SnS2 powder by the vapor transport method. The synthesized SnS2 nanocrystals had a 2D layered structure with hexagonal symmetry and exhibited typical n-type semiconducting characteristics, with an optical band gap of 2.05 eV. This novel method, which uses a preferentially prepared source for vapor transport, could provide a simple way to synthesize new types of 2D layered materials. This is because it only requires the volatilization of a source and subsequent condensation to a single crystal for the growth of 2D materials, with no complex chemical reactions occurring during vapor transport. © 2016 American Chemical Society. -
dc.language English -
dc.publisher AMER CHEMICAL SOC -
dc.title Vapor Transport Synthesis of Two-Dimensional SnS2 Nanocrystals Using a SnS2 Precursor Obtained from the Sulfurization of SnO2 -
dc.type Article -
dc.identifier.doi 10.1021/acs.cgd.6b00447 -
dc.identifier.scopusid 2-s2.0-84978971949 -
dc.identifier.bibliographicCitation Crystal Growth and Design, v.16, no.7, pp.3884 - 3889 -
dc.subject.keywordPlus Annealing Condition -
dc.subject.keywordPlus ATOMIC LAYERS -
dc.subject.keywordPlus Communication Technologies -
dc.subject.keywordPlus Crystal Growth Techniques -
dc.subject.keywordPlus DEPOSITION -
dc.subject.keywordPlus DIRECT-BANDGAP -
dc.subject.keywordPlus Electronics -
dc.subject.keywordPlus Energy Gap -
dc.subject.keywordPlus Graphene -
dc.subject.keywordPlus Hexagonal Symmetry -
dc.subject.keywordPlus Layered Structures -
dc.subject.keywordPlus Metal Chalcogenide -
dc.subject.keywordPlus METALS -
dc.subject.keywordPlus MOLYBDENUM-DISULFIDE -
dc.subject.keywordPlus Nanocrystalline Powders -
dc.subject.keywordPlus NANOCRYSTALS -
dc.subject.keywordPlus NANOSHEETS -
dc.subject.keywordPlus PHASE GROWTH -
dc.subject.keywordPlus Powder Metals -
dc.subject.keywordPlus SINGLE-LAYER MOS2 -
dc.subject.keywordPlus Single Crystals -
dc.subject.keywordPlus TRANSITION-METAL DICHALCOGENIDES -
dc.subject.keywordPlus Two Dimensional (2 D) -
dc.subject.keywordPlus Vapor Transport Methods -
dc.citation.endPage 3889 -
dc.citation.number 7 -
dc.citation.startPage 3884 -
dc.citation.title Crystal Growth and Design -
dc.citation.volume 16 -
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Division of Nanotechnology 1. Journal Articles

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