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The spin Hall effect has been attracting worldwide attention as one of the methods for controlling the magnetic spin structure. However, it has the limitations in layered structure and requirement of high current density, Jc ~ 10^10A/m2.
In this thesis, the Co0.7-Ni0.3-O-Pt phase alloy single layer having a structure in which each phase is randomly distributed in several nanometer sizes like the alloy was reported. Unlike general layered thin film system, this structure has a unique interfacial structure as Co, Ni, O and Pt phases are randomly distributed in a single layer.
When a current is applied to this thin film, the spin Hall effect generated by the current flowing through the Pt phases applies spin torque to other phases at the interface, and this result was observed through the change of the exchange bias. To find out the cause of the occurrence, the same structure was fabricated using Au instead of Pt and Fe instead of Co and Ni, and the same experiment was performed. As a result, it was found that the spin structure of the antiferromagnetic material was controlled by the spin Hall effect. In addition, the magnitude of the induced exchange bias was proportional to the current density and degree of oxidation of the film and exhibited stable reversibility and repeatability within the measured current density range. Using this, field-free magnetization switching was also performed and all of the results were achieved at a current density of Jc ~10^10A/m2, which is one order lower than the previously reported value.
Therefore, the results of this thesis overcome the limitations of the spin torque and the layered thin film system through phase alloy single layer structure, which suggests the possibility of improving the performance of a device designed based on the control of the spin structure.