Title

Surface Engineering on Low Dimensional Materials for Optoelectronic Applications

Alternative Title

광전소자 응용을 위한 저차원 물질들의 계면제어 엔지니어링

DGIST Authors

Min-Hye Jeong ; Jong-Soo Lee ; Jae Dong Lee

Advisor

이종수

Co-Advisor(s)

Jae Dong Lee

Issued Date

2022

Awarded Date

2022/08

Citation

Min-Hye Jeong. (2022). Surface Engineering on Low Dimensional Materials for Optoelectronic Applications. doi: 10.22677/thesis.200000628600

Type

Thesis

Subject

low dimensional materials, transistor, photodetector, surface engineering, optoelectronic device, 저차원물질, 트랜지스터, 광검출기, 표면엔지니어링, 광전소자

Description

low dimensional materials, transistor, photodetector, surface engineering, optoelectronic device, 저차원물질, 트랜지스터, 광검출기, 표면엔지니어링, 광전소자

Abstract

더보기

Table Of Contents

Chapter 1. Introduction 1
Ⅰ. Introduction to low-dimensional materials 1
1.1 Low dimensional materials 1
1.2 Device fabrication and device structures 12
1.3 Optoelectronic applications and physic 24
1.4 References 30
Chapter 2. Surface Engineering of 2D materials 35
Ⅱ. Recovery Mechanism of Degraded Black Phosphorus Field-Effect Transistors by 1,2-Ethanedithiol Chemistry and Extended Device Stability 35
2.1 Introduction 35
2.2 Experimental section 37
2.3 Results and discussion 38
2.4 Conclusion 49
2.5 References 50
Ⅲ. Realizing long-term stability and thickness control of black phosphorus by ambient thermal treatment 54
3.1 Introduction 54
3.2 Experimental section 56
3.3 Results and discussion 58
3.4 Conclusion 71
3.5 References 72
Chapter 3. Novel hybrid structure of 2D material and 0D materials 76
Ⅳ. High-Performance 2D-0D (QDs / BP) hybrid photodetectors 76
4.1 Introduction 76
4.2 Experimental section 78
4.3 Results and discussion 80
4.4 Conclusion 87
4.5 References 88
Ⅴ. High-Performance 2D-0D-2D (MoS₂/CdSe/WSe₂) hybrid photodetectors 91
5.1 Introduction 91
5.2 Experimental section 93
5.3 Results and discussion 95
5.4 Conclusion 103
5.5 References 104
Chapter 4. High exciton binding energy issue in 2D materials. 106
Ⅵ. Probing the importance of charge balance and noise current in WSe₂/WS₂/MoS₂ van der Waals heterojunction phototransistors by selective electrostatic doping 106
6.1 Introduction 106
6.2 Experimental section 108
6.3 Results and discussion 110
6.4 Conclusion 122
6.5 References 123
Ⅶ. Multilayer WSe₂/MoS₂ heterojunction phototransistors through peri-odically arrayed nanopore structures for bandgap engineering 126
7.1 Introduction 126
7.2 Experimental section 128
7.3 Results and discussion 131
7.4 Conclusion 154
7.5 Reference 155
Ⅷ. 요 약 문 158

URI

http://dgist.dcollection.net/common/orgView/200000628600
http://hdl.handle.net/20.500.11750/16781

DOI

10.22677/thesis.200000628600

Degree

Doctor

Department

Department of Energy Science and Engineering

Publisher

DGIST

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