Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Juneyoung | - |
dc.contributor.author | Choi, Pyung | - |
dc.contributor.author | Lyu, Hong-Kun | - |
dc.contributor.author | Shin, Jang-Kyoo | - |
dc.date.accessioned | 2022-10-14T02:00:08Z | - |
dc.date.available | 2022-10-14T02:00:08Z | - |
dc.date.created | 2022-02-15 | - |
dc.date.issued | 2022-01 | - |
dc.identifier.citation | 센서학회지, v.31, no.1, pp.1 - 5 | - |
dc.identifier.issn | 1225-5475 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/16904 | - |
dc.description.abstract | In this paper, the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor(MOSFET)-type photodetector with high sensitivity in the 408 nm – 941 nm range are presented. High sensitivity is important for photodetectors, which are used in several scientific and industrial applications. Owing to its inherent amplifying characteristics, the GBT MOSFET-type photodetector exhibits high sensitivity. The presented GBT MOSFET-type photodetector was designed and fabricated via a standard 0.18 µm complementary metal-oxide-semiconductor (CMOS) process, and its characteristics were analyzed. The photodetector was analyzed with respect to its width to length (W/L) ratio, bias voltage, and incident-light wavelength. It was confirmed experimentally that the presented GBT MOSFET-type photodetector has over 100 times higher sensitivity than a PN-junction photodiode with the same area in the 408 nm – 941 nm range | - |
dc.language | English | - |
dc.publisher | 한국센서학회 | - |
dc.title | Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector with High Sensitivity | - |
dc.type | Article | - |
dc.identifier.doi | 10.46670/JSST.2022.31.1.1 | - |
dc.type.local | Article(Domestic) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 2 | - |
dc.citation.publicationname | 센서학회지 | - |
dc.identifier.kciid | ART002809543 | - |
dc.contributor.nonIdAuthor | Jang, Juneyoung | - |
dc.contributor.nonIdAuthor | Choi, Pyung | - |
dc.contributor.nonIdAuthor | Shin, Jang-Kyoo | - |
dc.identifier.citationVolume | 31 | - |
dc.identifier.citationNumber | 1 | - |
dc.identifier.citationStartPage | 1 | - |
dc.identifier.citationEndPage | 5 | - |
dc.identifier.citationTitle | 센서학회지 | - |
dc.description.isOpenAccess | Y | - |
dc.subject.keywordAuthor | Gate/body-tied | - |
dc.subject.keywordAuthor | Photodetector | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | Sensitivity | - |
dc.subject.keywordAuthor | PN-junction photodiode | - |
dc.subject.keywordAuthor | Wavelength | - |
dc.contributor.affiliatedAuthor | Jang, Juneyoung | - |
dc.contributor.affiliatedAuthor | Choi, Pyung | - |
dc.contributor.affiliatedAuthor | Lyu, Hong-Kun | - |
dc.contributor.affiliatedAuthor | Shin, Jang-Kyoo | - |
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