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dc.contributor.author An, Sung Jin -
dc.contributor.author Bae, Myung-Ho -
dc.contributor.author Lee, Myoung-Jae -
dc.contributor.author Song, Man Suk -
dc.contributor.author Madsen, Morten H. -
dc.contributor.author Nygard, Jesper -
dc.contributor.author Schonenberger, Christian -
dc.contributor.author Baumgartner, Andreas -
dc.contributor.author Seo, Jungpil -
dc.contributor.author Jung, Minkyung -
dc.date.accessioned 2022-11-09T17:48:09Z -
dc.date.available 2022-11-09T17:48:09Z -
dc.date.created 2022-08-25 -
dc.date.issued 2022-09 -
dc.identifier.issn 2516-0230 -
dc.identifier.uri http://hdl.handle.net/20.500.11750/17089 -
dc.description.abstract We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 mu m lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines. -
dc.language English -
dc.publisher The Royal Society of Chemistry -
dc.title Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots -
dc.type Article -
dc.identifier.doi 10.1039/d2na00372d -
dc.identifier.scopusid 2-s2.0-85136293981 -
dc.identifier.bibliographicCitation Nanoscale Advances, v.4, no.18, pp.3816 - 3823 -
dc.description.isOpenAccess FALSE -
dc.subject.keywordPlus ACCURACY -
dc.citation.endPage 3823 -
dc.citation.number 18 -
dc.citation.startPage 3816 -
dc.citation.title Nanoscale Advances -
dc.citation.volume 4 -
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Division of Nanotechnology 1. Journal Articles

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