Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | An, Sung Jin | - |
dc.contributor.author | Bae, Myung-Ho | - |
dc.contributor.author | Lee, Myoung-Jae | - |
dc.contributor.author | Song, Man Suk | - |
dc.contributor.author | Madsen, Morten H. | - |
dc.contributor.author | Nygard, Jesper | - |
dc.contributor.author | Schonenberger, Christian | - |
dc.contributor.author | Baumgartner, Andreas | - |
dc.contributor.author | Seo, Jungpil | - |
dc.contributor.author | Jung, Minkyung | - |
dc.date.accessioned | 2022-11-09T17:48:09Z | - |
dc.date.available | 2022-11-09T17:48:09Z | - |
dc.date.created | 2022-08-25 | - |
dc.date.issued | 2022-09 | - |
dc.identifier.issn | 2516-0230 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/17089 | - |
dc.description.abstract | We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 mu m lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines. © 2022 The Author(s). | - |
dc.language | English | - |
dc.publisher | The Royal Society of Chemistry | - |
dc.title | Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/d2na00372d | - |
dc.identifier.wosid | 000840953100001 | - |
dc.identifier.scopusid | 2-s2.0-85136293981 | - |
dc.identifier.bibliographicCitation | Nanoscale Advances, v.4, no.18, pp.3816 - 3823 | - |
dc.description.isOpenAccess | TRUE | - |
dc.subject.keywordPlus | ACCURACY | - |
dc.citation.endPage | 3823 | - |
dc.citation.number | 18 | - |
dc.citation.startPage | 3816 | - |
dc.citation.title | Nanoscale Advances | - |
dc.citation.volume | 4 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.type.docType | Article | - |
There are no files associated with this item.